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參數(shù)資料
| 型號(hào)： | SFWI2955 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Advanced Power MOSFET |
| 中文描述： | 先進(jìn)的功率MOSFET |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大?。?/td> | 248K |
| 代理商： | SFWI2955 |
P-C HANNEL
POWER MOSFET
Fig 7. Breakdown Voltage vs. Temperature
Fig 8. On-Resistance vs. Temperature
Fig 11. Thermal Response
Fig 10. Max. Drain Current vs. Case Temperature
Fig 9. Max. Safe Operating Area
P
DM
.
t
1.
t
2.
SFW/I2955
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
10 ms
DC
1 ms
0.1 ms
@ Notes :
1. T
C
= 25
o
C
2. T
J
= 175
o
C
3. Single Pulse
Operation in This Area
is Limited by R
DS(on)
-
D
-V
DS
, Drain-Source Voltage [V]
-75
-50
-25
0
25
50
75
100
125
150
175
200
0.8
0.9
1.0
1.1
1.2
@ Notes :
1. V
GS
= 0 V
2. I
D
= -250
μ
A
-
D
D
T
J
, Junction Temperature [
o
C]
25
50
75
100
125
150
175
0
2
4
6
8
10
-
D
T
c
, Case Temperature [
o
C]
-75
-50
-25
0
25
50
75
100
125
150
175
200
0.0
0.5
1.0
1.5
2.0
2.5
@ Notes :
1. V
GS
= -10 V
2. I
D
= -4.7 A
R
D
D
T
J
, Junction Temperature [
o
C]
10
- 5
10
- 4
t
1
, Square Wave Pulse Duration [sec]
10
- 3
10
- 2
10
- 1
10
0
10
1
10
- 1
10
0
single pulse
0.2
0.1
0.01
0.02
0.05
D=0.5
@ Notes :
1. Z
θ
J C
(t)=3.06
o
C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
J M
-T
C
=P
D M
*Z
θ
J C
(t)
Z
θ
J
(
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| SFWI9510 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
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| SFWI9530 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
| SFWI9540 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
| SFWI9610 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
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