參數(shù)資料
型號(hào): SFWI2955
廠商: Fairchild Semiconductor Corporation
英文描述: Advanced Power MOSFET
中文描述: 先進(jìn)的功率MOSFET
文件頁數(shù): 3/7頁
文件大?。?/td> 248K
代理商: SFWI2955
P-C HANNEL
POWER MOSFET
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
Fig 6. Gate Charge vs. Gate-Source Voltage
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 4. Source-Drain Diode Forward Voltage
Fig 3. On-Resistance vs. Drain Current
SFW/I2955
2
4
6
8
10
10
-1
10
0
10
1
25
o
C
175
o
C
- 55
o
C
@ Notes :
1. V
GS
= 0 V
2. V
DS
= -30 V
3. 250
μ
s Pulse Test
-
D
-V
GS
, Gate-Source Voltage [V]
0
10
20
-I
D
, Drain Current [A]
30
40
50
60
70
0.0
0.1
0.2
0.3
0.4
@ Note : T
J
= 25
o
C
V
GS
= -20 V
V
GS
= -10 V
R
D
]
D
0.5
1.0
-V
SD
, Source-Drain Voltage [V]
1.5
2.0
2.5
3.0
3.5
10
-1
10
0
10
1
175
o
C
25
o
C
@ Notes :
1. V
GS
= 0 V
2. 250
μ
s Pulse Test
-
D
10
0
10
1
0
200
400
600
800
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
@ Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
-V
DS
, Drain-Source Voltage [V]
10
-1
10
0
10
1
10
-1
10
0
10
1
@ Notes :
1. 250
μ
s Pulse Test
2. T
C
= 25
o
C
V
GS
Top : - 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom : - 4.5 V
-
D
-V
DS
, Drain-Source Voltage [V]
0
2
4
Q
G
, Total Gate Charge [nC]
6
8
10
12
14
16
0
5
10
V
DS
= -48 V
V
DS
= -30 V
V
DS
= -12 V
@ Notes : I
D
=-9.4 A
-
G
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