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參數(shù)資料
| 型號： | SFH9154 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Advanced Power MOSFET |
| 中文描述： | 18 A, 150 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3P, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 231K |
| 代理商： | SFH9154 |
SFH9154
BV
DSS
= -150 V
R
DS(on)
= 0.2
I
D
= -18 A
-150
-18
-11.5
-72
±
30
1215
-18
20.4
-5.0
204
1.63
- 55 to +150
300
0.61
--
40
--
0.24
--
1
I
Avalanche Rugged Technology
I
Rugged Gate Oxide Technology
I
Lower Input Capacitance
I
Improved Gate Charge
I
Extended Safe Operating Area
I
150
o
C Operating Temperature
I
Lower Leakage Current : 10
μ
A (Max.) @ V
DS
= -150V
I
Lower R
DS(ON)
: 0.140
(Typ.)
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
R
θ
JC
R
θ
CS
R
θ
JA
o
C/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
o
C)
Continuous Drain Current (T
C
=100
o
C)
Drain Current-Pulsed
①
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
②
Avalanche Current
①
Repetitive Avalanche Energy
①
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25
o
C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8
＂
from case for 5-seconds
③
Characteristic
Value
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
P
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
o
C
A
o
C
TO-3P
1.Gate 2. Drain 3. Source
3
2
1
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