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參數(shù)資料
| 型號(hào)： | SFH9250L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Advanced Power MOSFET |
| 中文描述： | 19.5 A, 200 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3P, 3 PIN |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 546K |
| 代理商： | SFH9250L |
Advanced Power MOSFET
SFH9250L
BV
DSS
= -200 V
R
DS(on)
= 0.23
I
D
= -19.5 A
-200
-19.5
-12.3
-78
±
20
990
-19.5
20.4
-5.0
204
1.63
- 55 to +150
300
0.61
--
40
--
0.24
--
Logic-Level Gate Drive
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitances
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10uA (Max.) @ V
DS
=-200V
Lower R
DS(ON)
: 0.175
(Typ.)
Thermal Resistance
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
R
θ
JC
R
θ
CS
R
θ
JA
°
C /W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
°
C)
Continuous Drain Current (T
C
=100
°
C)
Drain Current-Pulsed
①
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
②
Avalanche Current
①
Repetitive Avalanche Energy
①
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25
°
C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8
″
from case for 5-seconds
③
Characteristic
Value
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
P
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
°
C
A
°
C
TO-3P
1.Gate 2. Drain 3. Source
3
2
1
Rev. A
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