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參數(shù)資料
| 型號： | SFH425 |
| 廠商： | SIEMENS A G |
| 元件分類： | 紅外LED |
| 英文描述： | GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package |
| 中文描述： | 2.4 mm, 1 ELEMENT, INFRARED LED, 950 nm |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 48K |
| 代理商： | SFH425 |
SFH 420
SFH 425
Semiconductor Group
4
1997-11-01
Gruppierung der Strahlstrke
I
e
in Achsrichtung
gemessen bei einem Raumwinkel
= 0.01 sr
Grouping at radiant intensity
I
e
in axial direction
at a solid angle of
= 0.01 sr
Bezeichnung
Description
Symbol
Werte
Values
Einheit
Unit
Strahlstrke
Radiant intensity
I
F
= 100 mA,
t
p
= 20 ms
Strahlstrke
Radiant intensity
I
F
= 1 A,
t
p
= 100
μ
s
I
e
> 2.5
mW/sr
I
e typ.
38
mW/sr
Relative spectral emission
I
rel
=
f
(
λ
)
Forward current
I
F
=
f
(
V
F
), single pulse,
t
p
= 20
μ
s
10
1
OHR01938
λ
rel
Ι
0
880
920
960
1000
nm
1060
20
40
60
80
%
100
OHR01554
V
F
-3
10
10
-2
10
-1
10
0
F
Ι
A
1
2
3
4
V
5
Radiant intensity
Single pulse,
t
p
= 20
μ
s
10
2
A
I
e
100 mA =
f
(
I
F
)
OHR01551
10
-3
Ι
F
-2
10
10
-1
10
0
10
1
Ι
e 100 mA
e
Ι
-2
10
-1
10
0
10
1
10
A
Max. permissible forward current
I
F
=
f
(
T
A
)
OHR00883
0
F
Ι
0
20
40
60
80
100
120
mA
20
40
60
80
100
T
A
120
C
= 450 K/W
thjA
R
Radiation characteristics
S
rel
=
f
(
)
0
0.2
0.4
1.0
0.8
0.6
1.0
0.8
0.6
0.4
0
10
20
40
30
OHL01660
50
60
70
80
90
100
0
20
40
60
80
100
120
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SFH421 | GaAlAs-IR-Lumineszenzdiode in SMT-Gehause GaAlAs Infrared Emitter in SMT Package |
| SFH426 | GaAlAs-IR-Lumineszenzdiode in SMT-Gehause GaAlAs Infrared Emitter in SMT Package |
| SFH431 | INFRARED EMITTER |
| SFH435 | GaAs INFRARED EMITTER DOUBLE EMITTING DIODE |
| SFH4515 | GaAs-IR-Lumineszenzdioden 950 nm GaAs Infrared Emitters 950 nm |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SFH4250 | 制造商:OSRAM 功能描述:Q65110A2465_IRED_RO |
| SFH4250_12 | 制造商:OSRAM 制造商全稱:OSRAM 功能描述:IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung |
| SFH4250-R2/S | 制造商:OSRAM 功能描述:HIGH POWER EMITTERS |
| SFH4250R2/S-Z | 制造商:OSRAM 功能描述: |
| SFH4250S | 制造商:OSRAM 功能描述:High Power IR emitter,850nm,120deg |
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