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參數(shù)資料
| 型號(hào)： | SFH221 |
| 廠商： | SIEMENS A G |
| 元件分類： | 光敏二極管 |
| 英文描述： | CONN RCPT .100 100POS DUAL GOLD |
| 中文描述： | PHOTO DIODE |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 221K |
| 代理商： | SFH221 |
SFH 221 S
Semiconductor Group
401
Dunkelstrom,
V
R
= 10 V
Dark current
Spektrale Fotoempfindlichkeit,
λ
= 850 nm
Spectral sensitivity
I
R
10 (
≤
100)
nA
S
λ
0.55
A/W
Maximale Abweichung der
Fotoempfindlichkeit vom Mittelwert
Max. deviation of the system spectral
sensitivity from the average
Quantenausbeute,
λ
= 850 nm
Quantum yield
S
±
5
%
η
0.80
Electrons
Photon
Leerlaufspannung,
E
v
= 1000 Ix
Open-circuit voltage
Kurzschlu
β
strom,
E
v
= 1000 Ix
Short-circuit current
V
L
330 (
≥
280)
mV
I
K
24
μ
A
Isolationsstrom,
V
IS
= 100 V
Insulation current
I
IS
0.1 (
≤
1)
nA
Anstiegs und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
R
L
= 1 k
;
V
R
= 5 V;
λ
= 850 nm;
I
p
= 25
μ
A
Durchla
β
spannung,
I
F
= 40 mA,
E
= 0
Forward voltage
t
r
,
t
f
500
ns
V
F
1.0
V
Kapazitt,
V
R
= 0 V,
f
= 1 MHz,
E
= 0
Capacitance
C
0
25
pF
Temperaturkoeffizient für
V
L
Temperature coefficient of
V
L
Temperaturkoeffizient für
I
K
Temperature coefficient of
I
K
Rauschquivalente Strahlungsleistung
Noise equivalent power
V
R
= 10 V,
λ
= 850 nm
Nachweisgrenze,
V
R
= 10 V,
λ
= 850 nm
Detection limit
TC
V
–2.6
mV/K
TC
I
0.18
%/K
NEP
1.0 x 10
–13
W
√
Hz
D*
1.2 x 10
12
cm ·
√
Hz
W
Kennwerte
(
T
A
= 25
o
C, Normlicht A,
T
= 2856 K) für jede Einzeldiode
Characteristics
(
T
A
= 25
o
C, standard light A,
T
= 2856 K) per single diode
Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
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