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參數(shù)資料
| 型號： | SFF80N10Z |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 55 AMP (note 1) /100 Volts 12 mO N-Channel Trench Gate MOSFET |
| 中文描述： | 55 A, 100 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 封裝： | HERMETIC SEALED, TO-254Z, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 54K |
| 代理商： | SFF80N10Z |
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics
4/
SFF80N10M
SFF80N10Z
Symbol
Min
Typ Max Units
Drain to Source Breakdown Voltage
V
GS
= 0V, I
D
= 250μA
BV
DSS
100
––
––
V
Drain to Source On State Resistance
V
GS
= 10V, I
D
= 30A, Tj= 25
o
C
V
GS
= 10V, I
D
= 30A, Tj=125
o
C
V
GS
= 10V, I
D
= 30A, Tj= 200
o
C
V
GS
= 10V, I
D
= 85A, Tj= 25
o
C
R
DS(on)
––
––
––
––
9.5
16
22
10
12.0
––
––
––
mO
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250μA
V
GS(th)
2.0
––
4.0
V
Gate to Source Leakage
V
GS
= ±20V
I
GSS
––
––
±100
nA
Zero Gate Voltage Drain Current
V
DS
= 80V, V
GS
= 0V, T
j
= 25
o
C
V
DS
= 80V, V
GS
= 0V, T
j
= 125
o
C
V
DS
= 80V, V
GS
= 0V, T
j
= 200
o
C
I
DSS
––
––
––
––
1
50
10
μA
μA
mA
Forward Transconductance
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
Diode Forward Voltage
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
NOTES:
* Pulse Test: Pulse Width = 300μsec, Duty Cycle = 2%.
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screening per MIL-PRF-19500.
3/ For Package Outlines Contact Factory.
4/ Unless Otherwise Specified, All Electrical Characteristics @25
o
C.
V
DS
= 15V, I
D
= 30A, T
j
= 25
o
C
g
fs
23
––
––
Mho
V
GS
= 10V
V
DS
= 50V
I
D
= 85A
V
GS
= 10V
V
DS
= 50V
I
D
= 85A
R
G
= 2.5O
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
––
––
––
––
––
––
––
140
40
40
25
115
75
110
220
––
––
35
185
110
160
nC
nsec
I
F
= 50A, V
GS
= 0V
V
SD
––
1.0
1.5
V
I
F
= 50A, di/dt = 100A/usec
t
rr
I
RM(rec)
Q
rr
C
iss
C
oss
C
rss
––
70
5.5
0.2
8700
750
450
150
10
0.35
––
––
––
nsec
A
μC
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
––
––
––
pF
Available Part Numbers:
Consult Factory
PIN ASSIGNMENT (Standard)
Package
Drain
TO254
Pin 1
TO254Z
Pin 1
Source
Pin 2
Pin 2
Gate
Pin 3
Pin 3
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0019A DOC
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