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參數(shù)資料
| 型號： | SFF85N06Z |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 55 AMP (note 1) /60 Volts 7 mO N-Channel Trench Gate MOSFET |
| 中文描述： | 55 A, 60 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 封裝： | HERMETIC SEALED, TO-254Z, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 49K |
| 代理商： | SFF85N06Z |
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
TO-254 and TO-254Z
Note 1: maximum current limited by package
configuration
SFF85N06M
SFF85N06Z
55 AMP (note 1) /60 Volts
7 mO
N-Channel Trench Gate MOSFET
Features:
Trench gate technology for high cell density
Lowest ON-resistance in the industry
Enhanced operating temperature range
Hermetically Sealed, Isolated Package
Low Total Gate Charge
Fast Switching
Enhanced replacement for IRFP064
TX, TXV, S-Level screening available
Improved (R
DS(ON)
Q
G
) figure of merit
Maximum Ratings
Symbol
Value
Units
Drain - Source Voltage
Gate – Source Voltage
V
DSS
V
GS
I
D1
I
D2
I
D3
I
D4
I
AR
E
AR
P
D
60
±20
V
V
Max. Continuous Drain Current (package limited)
@ T
C
= 25oC
@ T
C
= 125oC
@ T
C
= 25oC
@ T
C
= 125oC
@ L= 0.1 mH
@ L= 0.1 mH
55 (note 1)
55 (note 1)
A
Max. Instantaneous Drain Current (Tj limited)
175
75
75
A
Max. Avalanche current
Repetitive Avalanche Energy
Total Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
(Junction to Case)
A
mJ
W
oC
280
210
@ T
C
= 25oC
T
OP
& T
STG
-55 to +175
0.7
(typ 0.55)
R
0JC
oC/W
TO-254 (M)
PIN 1
PIN 3
PIN 2
TO-254Z (Z)
PIN 3
PIN 2
PIN 1
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0020A
DOC
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