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參數(shù)資料
| 型號(hào)： | SFF80N10M |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 55 AMP (note 1) /100 Volts 12 mO N-Channel Trench Gate MOSFET |
| 中文描述： | 55 A, 100 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 封裝： | HERMETIC SEALED, TO-254, 3 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 54K |
| 代理商： | SFF80N10M |
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
TO-254, TO254Z
Note 1: maximum current limited by package
configuration
TO-254 (SFF85N10M) TO-254Z (SFF85N10Z)
SFF80N10M
SFF80N10Z
55 AMP (note 1) /100 Volts
12 mO
N-Channel Trench Gate MOSFET
Features:
Trench gate technology for high cell density
Lowest ON-resistance in the industry
Enhanced operating temperature range
Hermetically Sealed, Isolated Power Package
Low Total Gate Charge
Fast Switching
Enhanced replacement for IRM150
TX, TXV, S-Level screening available
Improved (R
DS(ON)
Q
G
) figure of merit
Maximum Ratings
Symbol
Value
Units
Drain - Source Voltage
Gate – Source Voltage
V
DSS
V
GS
I
D1
I
D2
I
D3
I
D4
I
AR
E
AR
P
D
100
±20
V
V
Max. Continuous Drain Current (package limited)
@ T
C
= 25oC
@ T
C
= 125oC
@ T
C
= 25oC
@ T
C
= 125oC
@ L= 0.1 mH
@ L= 0.1 mH
55 (note 1)
55 (note 1)
A
Max. Instantaneous Drain Current (Tj limited)
110
70
A
Max. Avalanche current
Repetitive Avalanche Energy
Total Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
75
280
250
A
mJ
W
oC
@ T
C
= 25oC
T
OP
& T
STG
-55 to +200
0.7
(typ 0.55)
Junction to Case
R
0JC
oC/W
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0019A DOC
TO-
PIN 1
PIN 3
PIN 2
PIN 3
PIN 2
PIN 1
TO-254
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| SFF80N10Z | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:55 AMP (note 1) /100 Volts 12 mO N-Channel Trench Gate MOSFET |
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