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參數(shù)資料
| 型號： | SFD30N06 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | N-Channel MOSFET |
| 中文描述： | N溝道MOSFET |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 1013K |
| 代理商： | SFD30N06 |
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{
{
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Absolute Maximum Ratings
Symbol
Parameter
Value
Units
V
DSS
Drain to Source Voltage
60
V
I
D
Continuous Drain Current(@T
C
= 25
°C)
23
A
Continuous Drain Current(@T
C
= 100
°C)
15
A
I
DM
V
GS
E
AS
dv/dt
Drain Current Pulsed
(Note 1)
92
A
Gate to Source Voltage
±20
V
Single Pulsed Avalanche Energy
(Note 2)
430
mJ
Peak Diode Recovery dv/dt
(Note 3)
7.0
V/ns
P
D
Total Power Dissipation(@T
A
= 25 °C)
2.5
W
Total Power Dissipation(@T
C
= 25 °C)
Derating Factor above 25 °C
44
W
0.35
W/°C
T
STG,
T
J
Operating Junction Temperature & Storage Temperature
- 55 ~ 150
°C
T
L
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
300
°C
Thermal Characteristics
Symbol
Parameter
Value
Typ.
Units
Min.
Max.
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
-
-
2.85
°C/W
Thermal Resistance, Junction-to-Ambient
-
-
110
°C/W
S FD30N06
December, 2002. Rev.
0.
1/7
Features
■
Low R
DS
(on) (0.04
)@V
GS
=10V
■
Gate Charge
(Typical 27nC)
■
Improved dv/dt Capability
■
100% Avalanche Tested
■
Maximum Junction Temperature Range
(150°C)
General Description
This Power MOSFET is produced using SemiWell’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a low
gate charge with superior switching performance, and rugged
avalanche characteristics. This Power MOSFET is well suited
for synchronous DC-DC Converters and Power Management in
portable and battery operated products.
N-Channel MOSFET
S emiWell
Semiconductor
Symbol
2. Drain
3. Source
1. Gate
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
D-PACK (TO-252)
1
2
3
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