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參數(shù)資料
| 型號： | SF0R3G42 |
| 廠商： | Toshiba Corporation |
| 英文描述： | LOW POWER SWITCHING AND CONTROL APPLICATIONS |
| 中文描述： | 低電源開關(guān)和控制應(yīng)用 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 245K |
| 代理商： | SF0R3G42 |
SF0R3G42
2001-07-13
1
TOSHIBA THYRISTOR SILICON PLANAR TYPE
SF0R3G42
LOW POWER SWITCHING AND CONTROL
APPLICATIONS
Repetitive Peak Off
State Voltage : V
DRM
= 400V
Repetitive Peak Reverse Voltage
Average On
State Current
Plastic Mold Type.
MAXIMUM RATINGS
: V
RRM
= 400V
: I
T (AV)
= 300mA
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Off-State Voltage and
Repetitive Peak Reverse Voltage
(R
GK
= 1k
)
V
DRM
V
RRM
400
V
Non
Repetitive Peak Reverse
Voltage (Non-Repetitive<5ms,
R
GK
= 1k
, T
j
= 0 ~ 125°C)
V
RSM
500
V
Average On
State Current
(Half Sine Waveform Ta = 45°C)
I
T (AV)
300
mA
R.M.S On
State Current
I
T (RMS)
450
mA
9 (50Hz)
Peak One Cycle Surge On
State
Current (Non-Repetitive)
I
TSM
9.9 (60Hz)
A
I
2
t Limit Value
I
2
t
0.4
A
2
s
Peak Gate Power Dissipation
P
GM
0.1
W
Average Gate Power Dissipation
P
G (AV)
0.01
W
Peak Forward Gate Voltage
V
FGM
3.5
V
Peak Reverse Gate Voltage
V
RGM
5
V
Peak Forward Gate Current
I
GM
125
mA
Junction Temperature
T
j
40~125
°C
Storage Temperature Range
T
stg
40~125
°C
Note:
Should be used with gate resistance as follows.
Unit: mm
JEDEC
JEITA
TOSHIBA
Weight: 0.2g
TO
92
SC
43
13
5A1A
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