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參數(shù)資料
| 型號(hào)： | SF0R5J43 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA THYRISTOR SILICON PLANAR TYPE |
| 中文描述： | 東芝硅平面型晶閘管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 244K |
| 代理商： | SF0R5J43 |
SF0R5G43,SF0R5J43
2001-07-10
1
TOSHIBA THYRISTOR SILICON PLANAR TYPE
SF0R5G43,SF0R5J43
LOW POWER SWITCHING AND CONTROL APPLICATIONS
Repetitive Peak Off
State Voltage : V
DRM
= 400,600V
Repetitive Peak Reverse Voltage
: V
RRM
= 400,600V
Average On
State Current
: I
T (AV)
= 500mA
Plastic Mold Type.
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
RATING
UNIT
SF0R5G43
400
Repetitive Peak
Off
State Voltage and
Repetitive Peak
Reverse Voltage
(R
GK
= 1k
)
SF0R5J43
V
DRM
V
RRM
600
V
SF0R5G43
500
Non
Repetitive Peak
Reverse Voltage
(Non-Repetitive < 5ms,
R
GK
= 1k
,
T
j
= 0~110°C)
SF0R5J43
V
RSM
720
V
Average On
State Current
(Half Sine Waveform Tc = 30°C)
I
T (AV)
500
mA
R.M.S On
State Current
I
T (RMS)
800
mA
7 (50Hz)
Peak One Cycle Surge On
State
Current (Non-Repetitive)
I
TSM
8 (60Hz)
A
I
2
t Limit Value
I
2
t
0.25
A
2
s
Peak Gate Power Dissipation
P
GM
1
W
Average Gate Power Dissipation
P
G (AV)
0.01
W
Peak Forward Gate Voltage
V
FGM
8
V
Peak Reverse Gate Voltage
V
RGM
5
V
Peak Forward Gate Current
I
GM
500
mA
Junction Temperature
T
j
65~125
°C
Storage Temperature Range
T
stg
65~125
°C
Note:
Should be used with gate resistance as follows.
Unit: mm
JEDEC
JEITA
TOSHIBA
Weight: 0.2g
TO
92
SC
43
13
5A1D
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