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參數(shù)資料
| 型號(hào)： | SEA Series |
| 英文描述： | SRAM Memory Card 128 kB Through512 kB(128 kB - 512 kB靜態(tài)RAM存儲(chǔ)器卡) |
| 中文描述： | SRAM存儲(chǔ)卡128 kB的Through512 kB左右（128 kB的- 512 KB的靜態(tài)RAM的存儲(chǔ)器卡） |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 98K |
| 代理商： | SEA SERIES |
June 2000 Rev. 3 - ECO #12894
5
PCMCIA Flash Memory Card
SEA Series
PC Card Products
Absolute Maximum Ratings
(2)
Operating Temperature TA (ambient)
Commercial
Industrial
Storage Temperature
Commercial
Industrial
Voltage on any pin relative to VSS
VCC supply Voltage relative to VSS
0°C to +60 °C
-40°C to +85 °C
0°C to +60 °C
-40°C to +85 °C
-0.5V to VCC+0.5V (1)
-0.5V to +7.0V
Notes:
(1) During transitions, inputs may
undershoot to -2.0V or overshoot to VCC
+2.0V for periods less than 20ns.
(2) Stress greater than those listed under
“Absolute Maximum ratings” may cause
permanent damage to the device. This is a
stress rating only and functional operation at
these or any other conditions greater than
those indicated in the operational sections
of this specification is not implied. Exposure
to absolute maximum rating conditions for
extended periods may affect reliability.
Sym
ICC
Parameter
VCC Active Current
Density
128KB
512KB
All
Notes
1
Min
Typ
(3)
40
40
< 1
Max
80
80
10
Units
mA
Test Conditions
VCC = 5.25V
tcycle = 150ns
VCC = 5.25V
Control Signals = VCC
VCC = VCCMAX
Vin =VCC or VSS
VCC = VCCMAX
Vout =VCC or VSS
ICCS
VCC Standby Current
2,4
< 0.1
mA
ILI
Input Leakage Current
All
5,6
±20
μA
ILO
Output Leakage Current
All
6
±20
μA
VIL
VIH
Input Low Voltage
Input High Voltage
All
All
6
6
0
0.8
VCC
+0.5
0.4
VCC
V
V
3.85
VOL
VOH
Output Low Voltage
Output High Voltage
All
All
6
6
V
V
IOL = 3.2mA
IOH = -2.0mA
VCC-
0.4
Notes:
1. All currents are for x8 mode and are RMS values unless otherwise specified.
2. Control Signals: CE
1
#, CE
2
#, OE#, WE#, REG#.
3. Typical: VCC = 5V, T = +25C.
4. ICCS includes battery recharge current. Value depends on battery discharge level. ICCS min is specified for fully
charged battery. ICCS typical value is specified for battery discharge to 2.7V. ICCS max is specified for a fully
discharged battery (0V). Battery will recharge to 1.5V in 20 sec.
5. Values are the same for byte and word wide modes for all card densities.
6. Exceptions: Leakage currents on CE1#, CE2#, OE#, REG# and WE# will be < 500 μA when VIN = GND due to
internal pull-up resistors.
CMOS Test Conditions: VIL = VSS ± 0.2V, VIH = VCC ± 0.2V
DC Characteristics
(1)
Battery Characteristics
Parameter
Battery Life
Density
All
128KB
512KB
Notes
(1)
(2)
Type I
10
24
18
Units
years
Conditions
Normal operation, T=25C
T=25C
Battery backup time is a calculated
value and is not guaranteed. This
should not be used to schedule
battery recharging.
Battery
Backup Time
months
(typical)
Notes:
1. Battery Life refers to functional lifetime of battery.
2. Battery backup time is density and temperature dependent.
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