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參數(shù)資料
| 型號(hào)： | SD1530-08 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
| 中文描述： | 射頻 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 19K |
| 代理商： | SD1530-08 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CES
I
C
= 75 mA
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
55
UNITS
V
BV
EBO
I
E
= 25 mA
4.0
V
h
FE
V
CE
= 5.0 V I
C
= 300 mA
10
---
P
G
h
C
V
CC
= 50 V
PULSE WIDTH
= 10
μ
S
P
out
= 25 W
fo = 960 to 1215 MHz
DUTY CYCLE
= 1.0%
8.5
10
45
dB
%
NPN SILICON RF POWER TRANSISTOR
ASI SD1530-7
DESCRIPTION:
The
ASI SD1530-7
is a Common
Base Device Designed for DME, IFF
and Tacan Pulse Applications.
FEATURES INCLUDE:
Gold Metalization
Input Matching
Broad Band Performance
MAXIMUM RATINGS
I
C
2.5 A
V
CES
55 V
P
DISS
125 W @ T
C
= 25
O
C
-55
O
C to +200
O
C
-55
O
C to +200
O
C
1.4
O
C/W
T
J
T
STG
q
JC
PACKAGE STYLE 250 2L FLG (A)
1 = COLLECTOR 2 = EMITTER
3 = BASE
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