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參數資料
| 型號： | SD1905 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | HF/VHF POWER MOSFET N-Channel Enhancement Mode |
| 中文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | 0.380 INCH, FM-4 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 15K |
| 代理商： | SD1905 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25°C
SYMBOL
BV
DSS
I
D
= 10 mA
I
DSS
V
DS
= 28 V
I
GSS
V
DS
= 0 V
g
fs
I
D
= 10 A
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
65
.7
UNITS
V
mA
μ
A
mohs
V
GS
= 0 V
V
GS
= 20 V
V
DS
= 10 V
5.0
1.0
C
iss
C
oss
C
rss
V
DS
= 28 V
V
GS
= 0 V
f = 1.0 MHz
80
70
20
pF
P
G
η
D
V
DD
= 28 V
f = 150 MHz
I
DQ
= 25 mA P
out
= 45 W
12
50
dB
%
HF/VHF POWER MOSFET
N-Channel Enhancement Mode
SD1905
DESCRIPTION:
The
ASI SD1905
is Designed for
General Purpose Class-A,B Power
Amplifier Applications up to 200 MHz.
FEATURES:
P
G
= 13 dB Typical at 200 MHz
Common Source Configuration
Omnigold
Metalization System
MAXIMUM RATINGS
I
D
V
(BR)DSS
V
DGR
V
GS
P
DISS
T
J
T
STG
θ
JC
8.4 A
65 V
65 V
±
20 V
117 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
1.5 °C/W
PACKAGE STYLE .380 4L FLG
MINIMUM
inches / mm
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.385 / 9.78
.980 / 24.89
H
.160 / 4.06
.180 / 4.57
DIM
.220 / 5.59
.230 / 5.84
.105 / 2.67
.085 / 2.16
I
J
.240 / 6.10
.255 / 6.48
.785 / 19.94
F
B
G
.125
.125 NOM.
FULL R
D
E
C
H
.112 x 45°
A
I
J
.004 / 0.10
.006 / 0.15
.280 / 7.11
.720 / 18.29
.730 / 18.54
S
S
D
G
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