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參數(shù)資料
| 型號(hào)： | SD1526-08 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.250 X 0.250 INCH, FM-2 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 27K |
| 代理商： | SD1526-08 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
BV
CBO
I
C
= 1.0 mA
BV
CEO
I
C
= 5.0 mA
BV
CES
I
C
= 5.0 mA
BV
EBO
I
E
= 1.0 mA
I
CES
V
CE
= 28 V
h
FE
V
CE
= 5.0 V I
C
= 100 mA
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
45
UNITS
V
45
V
45
V
3.5
V
1.0
mA
10
200
---
P
G
V
CE
= 28 V
PULSE WIDTH
=10
μ
S
DUTY CYCLE
=1.0%
P
out
= 5.0 W
f
= 1025 to 1150 MHz
9.5
dB
NPN SILICON RF POWER TRANSISTOR
SD1526-08
DESCRIPTION:
The
ASI SD1526-08
is a Common
Base Device Designed for IFF, DME,
and Tacan Pulse Applications.
FEATURES INCLUDE:
Gold Metalization
Input Matching
Low Thermal Resistance
MAXIMUM RATINGS
I
C
1.0 A
V
CES
45 V
P
DISS
21.9 W @ T
C
= 25 °C
T
J
-55 °C to +200 °C
T
STG
-55 °C to +150 °C
θ
JC
8.0 °C/W
PACKAGE STYLE 250 2L FLG (A)
1 = COLLECTOR 2 = EMITTER
3 = BASE
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|---|---|
| SD1526-1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:RF & MICROWAVE TRANSISTORS IFF/DME APPLICATIONS |
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| SD1527-8 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:RF & MICROWAVE TRANSISTORS IFF/DME APPLICATIONS |
| SD1528-06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
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