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參數(shù)資料
| 型號(hào)： | SBF50P10-023L |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | RAD TOLERANT LOW RDS HERMETIC POWER MOSFET - P-CHANNEL |
| 中文描述： | 50 A, 100 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-254CG, 3 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 165K |
| 代理商： | SBF50P10-023L |
221 WEST INDUSTRY COURT
DEER PARK, NY 11729-4681
PHONE (631) 586-7600
FAX (631) 242-9798
World Wide Web Site - www.sensitron.com
E-Mail Address - sales@sensitron.com
SENSITRON
TECHNICAL DATA
DATA SHEET 4998, REV. -
Post-Total Dose (up to TID ratings) Irradiation Data
CHARACTERISTIC
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V
GS
= 0V, I
D
= -250
μ
A
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V
GS
= -10V, I
D
= -20A
V
GS
= - 4.5V, I
D
= - 15A
GATE THRESHOLD VOLTAGE V
DS
= V
GS
, I
D
= -250
μ
A
ZERO GATE VOLTAGE DRAIN CURRENT
V
DS
= 0.8 x Max. rating, V
GS
= 0V, T
J
= 25
°
C
GATE TO SOURCE LEAKAGE FORWARD V
GS
= 20V
GATE TO SOURCE LEAKAGE REVERSE V
GS
= -20V
DIODE FORWARD VOLTAGE I
F
= -20A, V
GS
= 0V
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
Single Event Effect Safe Operating Area
LET
(MeVcm
2
/mg)
(MeV)
Br
37.47
278
I
59.72
320
SYMBOL
BV
DSS
MIN.
-100
TYP.
-
MAX.
-
UNITS
Volts
R
DS(ON)
-
0.019
0.021
-
-
-
0.023
0.025
-3
-1
100
-100
-1.5
V
GS(th)
I
DSS
I
GSS
-1
-
-
Volts
μ
A
nA
V
SD
-
- 1.0
Volts
V
DS
(V)
V
GS
= 10V
-100
-100
Ion
Energy
Range
(
μ
m)
36.1
31.1
V
GS
=0V
-100
-100
V
GS
= 5V
-100
-100
V
GS
= 15V
-100
-100
V
GS
= 20V
-100
-100
SEE Safe Operation Area
-120
-100
-80
-60
-40
-20
0
0
5
10
15
20
VGS (V)
V
Br
I
SBF50P10-023L
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