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| 型號(hào)： | SBF50P10-023L |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | RAD TOLERANT LOW RDS HERMETIC POWER MOSFET - P-CHANNEL |
| 中文描述： | 50 A, 100 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-254CG, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 165K |
| 代理商： | SBF50P10-023L |
221 WEST INDUSTRY COURT
DEER PARK, NY 11729-4681
PHONE (631) 586-7600
FAX (631) 242-9798
World Wide Web Site - www.sensitron.com
E-Mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4998, REV. -
RAD TOLERANT LOW R
DS
HERMETIC
POWER MOSFET - P-CHANNEL
FEATURES:
100 Volt, 0.023 Ohm, 90A MOSFET (current limited to 50A by package)
Characterized for V
GS
of 4.5V for Logic Level Drive
Total Dose Characterized to 300 Krad
Single Event Effect Capability Characterized to 60 MeVcm
2
/mg LET
Isolated Hermetic Metal Package; Ultra Low R
DS (on)
Ceramic Seals with Glidcop leads
Also available with glass seals and copper core alloy 52 leads
MAXIMUM RATINGS
ALL RATINGS ARE AT T
C
= 25
°
C UNLESS OTHERWISE SPECIFIED.
RATING
GATE TO SOURCE VOLTAGE
ON-STATE DRAIN CURRENT
PULSED DRAIN CURRENT
OPERATING AND STORAGE TEMPERATURE
TOTAL DEVICE DISSIPATION
THERMAL RESISTANCE, JUNCTION TO CASE
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V
GS
= 0V, I
D
= - 250
μ
A
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V
GS
= - 10V, I
D
= - 20A
V
GS
= - 4.5V, I
D
= - 15A
GATE THRESHOLD VOLTAGE V
DS
= V
GS
, I
D
= - 250
μ
A
FORWARD TRANSCONDUCTANCE
V
DS
= - 15V, I
D
= - 20A
ZERO GATE VOLTAGE DRAIN CURRENT
V
DS
= 0.8 x Max. rating, V
GS
= 0V, T
J
= 25
°
C
T
J
= 125
°
C
GATE TO SOURCE LEAKAGE FORWARD V
GS
= 20V
GATE TO SOURCE LEAKAGE REVERSE V
GS
= -20V
TURN ON DELAY TIME V
DD
= - 50V
RISE TIME I
D
= - 50A
SYMBOL
V
GS
I
D25
I
DM
T
J
/T
STG
P
D
R
θ
JC
MIN.
-
-
-
-55
-
-
TYP.
-
-
-
-
-
-
MAX.
±
20
- 50
- 90
+150
225
0.55
UNITS
Volts
Amps
Amps
°
C
Watts
°
C/W
SYMBOL
BV
DSS
MIN.
-100
TYP.
-
MAX.
-
UNITS
Volts
R
DS(ON)
-
-
0.019
0.021
-
80
0.023
0.025
- 3
-
V
GS(th)
g
fs
- 1
-
Volts
S(1/
)
I
DSS
-
-
- 1
- 500
100
-100
30
855
220
1300
- 1.5
μ
A
I
GSS
-
-
nA
TURN OFF DELAY TIME V
GS
= - 10V
FALL TIME R
G
= 1
DIODE FORWARD VOLTAGE I
F
= - 20A, V
GS
= 0V
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
REVERSE RECOVERY TIME T
J
= 25
°
C,
I
F
= - 20A, V
R
= - 50V
di/dt = - 100A/
μ
sec
INPUT CAPACITANCE V
GS
= 0 V,
OUTPUT CAPACITANCE V
DS
= - 50 V,
REVERSE TRANSFER CAPACITANCE f = 1.0MHz
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
-
20
510
145
870
- 1.0
nsec
-
Volts
t
rr
-
80
11100
700
1700
120
nsec
C
iss
C
oss
C
rss
-
-
pF
SBF50P10-023L
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