參數(shù)資料
型號(hào): SA58632BS
廠商: NXP Semiconductors N.V.
元件分類: 音頻放大器
英文描述: 2 x 2.2 W BTL audio amplifier
封裝: SA58632BS<SOT910-1 (HVQFN20)|<<http://www.nxp.com/packages/SOT910-1.html<1<Always Pb-free,;
文件頁(yè)數(shù): 26/28頁(yè)
文件大小: 283K
代理商: SA58632BS
SA58632_2
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 4 March 2010
7 of 28
NXP Semiconductors
SA58632
2
× 2.2 W BTL audio amplifier
[2]
The DC output voltage with respect to ground is approximately 0.5
× V
CC.
12. Dynamic characteristics
[1]
Gain of the amplifier is 2
× (R2 / R1) in test circuit of Figure 3.
[2]
The output noise voltage is measured at the output in a frequency range from 20 Hz to 20 kHz (unweighted), with a source impedance
of Rs =0 Ω at the input.
[3]
Supply voltage ripple rejection is measured at the output with a source impedance of Rs =0 Ω at the input. The ripple voltage is a
sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS), which is applied to the positive supply rail.
[4]
Supply voltage ripple rejection is measured at the output, with a source impedance of Rs =0 Ω at the input. The ripple voltage is a
sine wave with a frequency between 100 Hz and 20 kHz and an amplitude of 100 mV (RMS), which is applied to the positive supply rail.
[5]
Output voltage in mute position is measured with an input voltage of 1 V (RMS) in a bandwidth of 20 kHz, which includes noise.
Table 7.
Dynamic characteristics
VCC =6V; Tamb =25 °C; RL =8 Ω; f = 1 kHz; VMODE = 0 V; measured in test circuit Figure 3; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Po
output power
THD+N = 10 %
1.2
1.5
-
W
THD+N = 0.5 %
0.9
1.1
-
W
THD+N = 10 %; VCC =9V;
application demo board
-2.2
-W
THD+N
total harmonic
distortion-plus-noise
Po = 0.5 W
-
0.15
0.3
%
Gv(cl)
closed-loop voltage gain
-
30
dB
ΔZ
i
differential input impedance
-
100
-
k
Ω
Vn(o)
output noise voltage
-
100
μV
PSRR
power supply rejection ratio
--dB
--dB
VO(mute)
mute output voltage
mute condition
-
200
μV
α
cs
channel separation
40
-
dB
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