D DC injection current
參數(shù)資料
型號: S9S08SC4E0CTG
廠商: Freescale Semiconductor
文件頁數(shù): 3/31頁
文件大?。?/td> 0K
描述: IC MCU 8BIT 4KB FLASH 16TSSOP
標(biāo)準(zhǔn)包裝: 96
系列: S08
核心處理器: S08
芯體尺寸: 8-位
速度: 40MHz
連通性: LIN,SCI
外圍設(shè)備: LVD,POR,PWM,WDT
輸入/輸出數(shù): 12
程序存儲器容量: 4KB(4K x 8)
程序存儲器類型: 閃存
RAM 容量: 256 x 8
電壓 - 電源 (Vcc/Vdd): 4.5 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 8x10b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 85°C
封裝/外殼: 16-TSSOP(0.173",4.40mm 寬)
包裝: 管件
Chapter 3 Electrical Characteristics
MC9S08SC4 MCU Series Data Sheet, Rev. 4
Freescale Semiconductor
11
15
D DC injection current 4, 5, 6, 7
Single pin limit
VIN > VDD
0—2
mA
IIC
VIN < VSS,
0
–0.2
mA
Total MCU limit, includes
VIN > VDD
0—
25
mA
sum of all stressed pins
VIN < VSS,
0
–5
mA
16
D Input Capacitance, all pins
CIn
——
8
pF
17
D RAM retention voltage
VRAM
——
0.6
1.0
V
18
D POR re-arm voltage8
VPOR
0.9
1.4
2.0
V
19
D POR re-arm time9
tPOR
—10
μs
20
P Low-voltage detection threshold —
high range
VDD falling
VDD rising
VLVD1
3.85
3.95
4.0
4.1
4.15
4.25
V
21
P
Low-voltage warning threshold —
high range 1
VDD falling
VDD rising
VLVW3
4.45
4.55
4.6
4.7
4.75
4.85
V
22
P
Low-voltage warning threshold —
high range 0
VDD falling
VDD rising
VLVW2
4.15
4.25
4.3
4.4
4.45
4.55
V
23
T Low-voltage inhibit reset/recover
hysteresis
Vhys
100
mV
24
P Bandgap Voltage Reference
10
VBG
1.171.201.22
V
1 Typical values are measured at 25
°C. Characterized, not tested.
2 When a pin interrupt is configured to detect rising edges, pull-down resistors are used in place of pull-up resistors.
3 The specified resistor value is the actual value internal to the device. The pull-up value may measure higher when measured
externally on the pin.
4 Power supply must maintain regulation within operating V
DD range during instantaneous and operating maximum current
conditions. If positive injection current (VIn > VDD) is greater than IDD, the injection current may flow out of VDD and could result
in external power supply going out of regulation. Ensure external VDD load will shunt current greater than maximum injection
current. This will be the greatest risk when the MCU is not consuming power. Examples are: if no system clock is present, or if
clock rate is very low (which would reduce overall power consumption).
5 All functional non-supply pins are internally clamped to V
SS and VDD.
6 Input must be current limited to the value specified. To determine the value of the required current-limiting resistor, calculate
resistance values for positive and negative clamp voltages, then use the larger of the two values.
7 The RESET pin does not have a clamp diode to V
DD. Do not drive this pin above VDD.
8 Maximum is highest voltage that POR will occur.
9 Simulated, not tested
10 Factory trimmed at V
DD = 5.0 V, Temp = 25°C
Table 3-6. DC Characteristics (continued)
Num C
Characteristic
Symbol
Condition
Min
Typ1
Max
Unit
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