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參數(shù)資料
| 型號： | S7171-0909 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | CCD area image sensor 512 】 512 pixels, Back-thinned FFT-CCD |
| 中文描述： | 防治荒漠化領域的圖像傳感器512】512像素，背減薄FFT的，防治荒漠化公約 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 189K |
| 代理商： | S7171-0909 |
CCD area image sensor
S7170-0909, S7171-0909
I
Absolute maximum ratings (Ta=25 °C)
Parameter
Operating temperature
Storage temperature
OD voltage
RD voltage
ISV voltage
ISH voltage
IGV voltage
IGH voltage
SG voltage
OG voltage
RG voltage
TG voltage
Vertical clock voltage
Horizontal clock voltage
Symbol
Topr
Tstg
V
OD
V
RD
V
ISV
V
ISH
V
IG1V
, V
IG2V
V
IG1H
, V
IG2H
V
SG
V
OG
V
RG
V
TG
V
P1V
, V
P2V
V
P1H
, V
P2H
Min.
-50
-50
-0.5
-0.5
-0.5
-0.5
-10
-10
-10
-10
-10
-10
-10
-10
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
+30
+70
+25
+18
+18
+18
+15
+15
+15
+15
+15
+15
+15
+15
Unit
°C
°C
V
V
V
V
V
V
V
V
V
V
V
V
I
Operating conditions (MPP mode, Ta=25 °C)
Parameter
Output transistor drain voltage
Reset drain voltage
Output gate voltage
Substrate voltage
Test point (vertical input source)
Test point (horizontal input source)
Test point (vertical input gate)
Test point (horizontal input gate)
Vertical shift register
clock voltage
Horizontal shift register
clock voltage
Symbol
V
OD
V
RD
V
OG
V
SS
V
ISV
V
ISH
V
IG1V
, V
IG2V
V
IG1H
, V
IG2H
V
P1VH
, V
P2VH
V
P1VL
, V
P2VL
V
P1HH
, V
P2HH
V
P1HL
, V
P2HL
V
SGH
V
SGL
V
RGH
V
RGL
V
TGH
V
TGL
Min.
18
11.5
1
-
-
-
-8
-8
4
-9
4
-9
4
-9
4
-9
4
-9
Typ.
20
12
3
0
V
RD
V
RD
0
0
6
-8
6
-8
6
-8
6
-8
6
-8
Max.
22
12.5
5
-
-
-
-
-
8
-7
8
-7
8
-7
8
-7
8
-7
Unit
V
V
V
V
V
V
V
V
High
Low
High
Low
High
Low
High
Low
High
Low
V
V
Summing gate voltage
V
Reset gate voltage
V
Transfer gate voltage
V
I
Electrical characteristics (Ta=25 °C)
Parameter
Signal output frequency
Vertical shift register capacitance
Horizontal shift register capacitance
Summing gate capacitance
Reset gate capacitance
Transfer gate capacitance
Charge transfer efficiency *
2
DC output level *
3
Output impedance *
3
Power consumption *
3
*
4
*2: Charge transfer efficiency per pixel, measured at half of the full well capacity.
*3: The values depend on the load resistance. (Typical, V
OD
=20 V, Load resistance=22 k
)
*4: Power consumption of the on-chip amplifier.
Symbol
fc
C
P1V
, C
P2V
C
P1H
, C
P2H
C
SG
C
RG
C
TG
CTE
Vout
Zo
P
Min.
-
-
-
-
-
-
0.99995
12
-
-
Typ.
-
6,400
120
7
7
150
0.99999
15
3
15
Max.
1
-
-
-
-
-
-
18
-
-
Unit
MHz
pF
pF
pF
pF
pF
-
V
k
mW
2
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| S72NXX | Standard Voltage Detector |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| S7171-0909-01 | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:512 × 512 pixels, back-thinned FFT-CCD |
| S7171-45R | 功能描述:RFI SHIELD FINGER AU 4MM SMD 制造商:harwin inc. 系列:- 零件狀態(tài):有效 形狀:- 厚度 - 總:0.157"（4.00mm） 寬度:0.091"（2.30mm） 長度:0.181"（4.60mm） 粘合劑:- 溫度范圍:-4°F ~ 158°F（-20°C ~ 70°C） 標準包裝:1 |
| S71805-10.000-X-15 | 制造商:Aker Technology Company Ltd 功能描述:XO SMD 1.8V 10.000MHz 5x7mm |
| S71805-12.000-X-15 | 制造商:Aker 功能描述:XO SMD 1.8V 12.000MHz 5x7mm |
| S71805-14.31818-X-15 | 制造商:Aker Technology Company Ltd 功能描述:XO SMD 1.8V 14.31818MHz 5x7mm |
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