參數(shù)資料
型號： S6010DS256
元件分類： 晶閘管
英文描述： SCR, TO-252AA
封裝： ROHS COMPLIANT, PLASTC, TO-252, DPAK-3
文件頁數(shù)： 7/10頁
文件大?。?/td> 228K
代理商： S6010DS256
245
2008 Littelfuse, Inc.
Please refer to http://www.littelfuse.com for current information.
Revised: July 9, 2008
Teccor
brand Thyristors
10 Amp Sensitive & Standard SCRs
Sxx10xSx & Sxx10x Series
Specifications are subject to change without notice.
1
Physical Specifications
Environmental Specifications
Test
Specifications and Conditions
MIL-STD-750, M-1040, Cond A Applied
Peak AC voltage @ 125°C for 1008 hours
MIL-STD-750, M-1051,
100 cycles; -40°C to +150°C; 15-min
dwell-time
EIA / JEDEC, JESD22-A101
1008 hours; 320V - DC: 85°C; 85%
rel humidity
MIL-STD-750, M-1031,
1008 hours; 150°C
AC Blocking
Temperature Cycling
Temperature/
Humidity
High Temp Storage
Low-Temp Storage
1008 hours; -40°C
Thermal Shock
MIL-STD-750, M-1056
10 cycles; 0°C to 100°C; 5-min dwell-
time at each temperature; 10 sec (max)
transfer time between temperature
EIA / JEDEC, JESD22-A102
168 hours (121°C at 2 ATMs) and
100% R/H
Autoclave
Resistance to
Solder Heat
MIL-STD-750 Method 2031
Solderability
ANSI/J-STD-002, category 3, Test A
Lead Bend
MIL-STD-750, M-2036 Cond E
Terminal Finish
100% Matte Tin-plated
Body Material
UL recognized epoxy meeting flammability
classification 94V-0
Lead Material
Copper Alloy
Design Considerations
Careful selection of the correct device for the application’s
operating parameters and environment will go a long way
toward extending the operating life of the Thyristor. Good
design practice should limit the maximum continuous
current through the main terminals to 75% of the device
rating. Other ways to ensure long life for a power discrete
semiconductor are proper heat sinking and selection of
voltage ratings for worst case conditions. Overheating,
overvoltage (including dv/dt), and surge currents are
the main killers of semiconductors. Correct mounting,
soldering, and forming of the leads also help protect
against component damage.
Product Selector
Part Number
Voltage
Gate Sensitivity
Type
Package
400V
600V
800V
1000V
Sxx10RS2
X
X
0.2mA
Sensitive SCR
TO-220R
Sxx10LS2
X
X
0.2mA
Sensitive SCR
TO-220L
Sxx10VS2
X
X
0.2mA
Sensitive SCR
TO-251
Sxx10DS2
X
X
0.2mA
Sensitive SCR
TO-252
Sxx10RS3
X
X
0.5mA
Sensitive SCR
TO-220R
Sxx10LS3
X
X
0.5mA
Sensitive SCR
TO-220L
Sxx10VS3
X
X
0.5mA
Sensitive SCR
TO-251
Sxx10DS3
X
X
0.5mA
Sensitive SCR
TO-252
Sxx10R
X
X
X
X
15mA
Standard SCR
TO-220R
Sxx10L
X
X
X
X
15mA
Standard SCR
TO-220L
Sxx10V
X
X
X
X
15mA
Standard SCR
TO-251
Sxx10D
X
X
X
X
15mA
Standard SCR
TO-252
Note: xx = Voltage
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S6010DS2RP 功能描述:SCR 10A 600V Sensing RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
S6010DS2TP 功能描述:SCR 10A 600V Sensing RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
S6010DS3 制造商:LITTELFUSE 制造商全稱:Littelfuse 功能描述:Sensitive SCRs (0.8 A to 10 A)
S6010DS3RP 功能描述:SCR 10A 600V Sensing RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
S6010DS3TP 功能描述:SCR 10A 600V Sensing RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
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