參數(shù)資料
型號(hào)： S29WS256N0PBAW011
廠商： Spansion Inc.
英文描述： 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
中文描述： 256/128/64兆位的CMOS 1.8伏只有同時(shí)讀/寫突發(fā)模式閃存
文件頁(yè)數(shù)： 86/99頁(yè)
文件大小： 1091K
代理商： S29WS256N0PBAW011
January 25, 2005 S29WS-N_00_G0
85
Ad vance
Information
11.8.7 Erase and Programming Performance
Notes:
1.
Typical program and erase times assume the following conditions: 25°C, 1.8 V VCC, 10,000
cycles; checkerboard data pattern.
2. Under worst case conditions of 90°C, VCC = 1.70 V, 100,000 cycles.
3. Typical chip programming time is considerably less than the maximum chip programming
time listed, and is based on utilizing the Write Buffer.
4. In the pre-programming step of the Embedded Erase algorithm, all words are programmed
to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence
for the program command. See the Appendix for further information on command
definitions.
6. Contact the local sales office for minimum cycling endurance values in specific applications
and operating conditions.
7. Refer to Application Note “Erase Suspend/Resume Timing” for more details.
8. Word programming specification is based upon a single word programming operation not
utilizing the write buffer.
9. The content in this document is Advance information for the S29WS064N and S29WS128N.
Content in this document is Preliminary for the S29W256N.
Parameter
Unit
Comments
Sector Erase Time
64 Kword
VCC
0.6
3.5
s
Excludes 00h
programming prior
to erasure (Note 4)
16 Kword
VCC
<0.15
2
Chip Erase Time
VCC
153.6 (WS256N)
77.4 (WS128N)
39.3 (WS064N)
308 (WS256N)
154 (WS128N)
78 (WS064N)
s
ACC
130.6 (WS256N)
65.8 (WS128N)
33.4 (WS064N)
262 (WS256N)
132 (WS128N)
66 (WS064N)
Single Word Programming Time
VCC
40
400
s
ACC
24
240
Effective Word Programming Time
utilizing Program Write Buffer
VCC
9.4
94
s
ACC
6
60
Total 32-Word Buffer Programming
Time
VCC
300
3000
s
ACC
192
1920
Chip Programming Time (Note 3)
VCC
157.3 (WS256N)
78.6 (WS128N)
39.3 (WS064N)
314.6 (WS256N)
157.3 (WS128N)
78.6 (WS064N)
s
Excludes system
level overhead
ACC
100.7 (WS256N)
50.3 (WS128N)
25.2 (WS064N)
201.3 (WS256N)
100.7 (WS128N)
50.3 (WS064N)
相關(guān)PDF資料
PDF描述
S29WS256N0LBFI011 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
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S2SD-05-24-L-02.75-SR 10 CONTACT(S), FEMALE, TWO PART BOARD CONNECTOR, IDC, SOCKET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29WS256N0PBAW012 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 Megabit (16/8/4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
S29WS256N0PBAW013 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 Megabit (16/8/4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
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S29WS256N0PBAW111 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS256N0PBAW112 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
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