- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄225141 > S29WS256N0PBAW011 (Spansion Inc.) 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY PDF資料下載
參數(shù)資料
| 型號(hào)： | S29WS256N0PBAW011 |
| 廠商： | Spansion Inc. |
| 英文描述： | 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| 中文描述： | 256/128/64兆位的CMOS 1.8伏只有同時(shí)讀/寫突發(fā)模式閃存 |
| 文件頁(yè)數(shù)： | 72/99頁(yè) |
| 文件大小： | 1091K |
| 代理商： | S29WS256N0PBAW011 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)當(dāng)前第72頁(yè)第73頁(yè)第74頁(yè)第75頁(yè)第76頁(yè)第77頁(yè)第78頁(yè)第79頁(yè)第80頁(yè)第81頁(yè)第82頁(yè)第83頁(yè)第84頁(yè)第85頁(yè)第86頁(yè)第87頁(yè)第88頁(yè)第89頁(yè)第90頁(yè)第91頁(yè)第92頁(yè)第93頁(yè)第94頁(yè)第95頁(yè)第96頁(yè)第97頁(yè)第98頁(yè)第99頁(yè)
72
S29WS-N_00_G0 January 25, 2005
Adva nce
Information
Notes:
1. Figure assumes 6 wait states for initial access and synchronous read.
2. The Set Configuration Register command sequence has been written with CR8=0; device outputs RDY one
cycle before valid data.
Figure 11.10. Linear Burst with RDY Set One Cycle Before Data
11.8.4 AC Characteristics—Asynchronous Read
Notes:
1. Not 100% tested.
2. The content in this document is Advance information for the S29WS064N and
S29WS128N. Content in this document is Preliminary for the S29W256N.
Parameter
Description
54 MHz
66 MHz
80
MHz
Unit
JEDEC
Standard
tCE
Access Time from CE# Low
Max
80
ns
tACC
Asynchronous Access Time
Max
80
ns
tAVDP
AVD# Low Time
Min
8
ns
tAAVDS
Address Setup Time to Rising Edge of AVD#
Min
4
ns
tAAVDH
Address Hold Time from Rising Edge of AVD#
Min
7
6
ns
tOE
Output Enable to Output Valid
Max
13.5
ns
tOEH
Output Enable Hold Time
Read
Min
0
ns
Toggle and Data# Polling
Min
10
ns
tOEZ
Output Enable to High Z (see Note)
Max
10
ns
tCAS
CE# Setup Time to AVD#
Min
0
ns
Da+1
Da
Da+2
Da+3
Da + n
OE#
Data
Addresses
Aa
AVD#
RDY
CLK
CE#
tCES
tACS
tAVC
tAVD
tACH
tOE
tRACC
tOEZ
tCEZ
tIACC
tAOE
tBDH
6 wait cycles for initial access shown.
Hi-Z
12
3
4
5
6
tRDYS
tBACC
tCR
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29WS256N0LBFI011 | 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| S2L40U | 1.4 A, SILICON, RECTIFIER DIODE |
| S2SD-05-24-L-02.75-SR | 10 CONTACT(S), FEMALE, TWO PART BOARD CONNECTOR, IDC, SOCKET |
| S2SD-05-24-L-02.75-S | 10 CONTACT(S), FEMALE, TWO PART BOARD CONNECTOR, IDC, SOCKET |
| S2SD-05-24C-L-02.75-SR | 10 CONTACT(S), FEMALE, TWO PART BOARD CONNECTOR, IDC, SOCKET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29WS256N0PBAW012 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 Megabit (16/8/4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| S29WS256N0PBAW013 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 Megabit (16/8/4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| S29WS256N0PBAW110 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| S29WS256N0PBAW111 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| S29WS256N0PBAW112 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。