參數(shù)資料
型號： S29WS256N0LBFI011
廠商： Spansion Inc.
英文描述： 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
中文描述： 256/128/64兆位的CMOS 1.8伏只有同時讀/寫突發(fā)模式閃存
文件頁數(shù)： 35/99頁
文件大?。?/td> 1091K
代理商： S29WS256N0LBFI011
38
S29WS-N_00_G0 January 25, 2005
Adva nce
Information
After the erase operation has been suspended, the bank enters the erase-suspend-read mode.
The system can read data from or program data to any sector not selected for erasure. (The de-
vice “erase suspends” all sectors selected for erasure.) Reading at any address within erase-
suspended sectors produces status information on DQ7-DQ0. The system can use DQ7, or DQ6,
and DQ2 together, to determine if a sector is actively erasing or is erase-suspended. Refer to Table
7.24 for information on these status bits.
After an erase-suspended program operation is complete, the bank returns to the erase-suspend-
read mode. The system can determine the status of the program operation using the DQ7 or DQ6
status bits, just as in the standard program operation.
In the erase-suspend-read mode, the system can also issue the Autoselect command sequence.
Refer to the “Write Buffer Programming Operation” section and the “Autoselect Command Se-
quence” section for details.
To resume the sector erase operation, the system must write the Erase Resume command. The
bank address of the erase-suspended bank is required when writing this command. Further writes
of the Resume command are ignored. Another Erase Suspend command can be written after the
chip has resumed erasing.
The following is a C source code example of using the erase suspend function. Refer to the
Spansion Low Level Driver User’s Guide (available on www.amd.com and www.fujitsu.com)
for general information on Spansion Flash memory software development guidelines.
/* Example: Erase suspend command */
*( (UINT16 *)bank_addr + 0x000 ) = 0x00B0;
/* write suspend command
*/
The following is a C source code example of using the erase resume function. Refer to the
Spansion Low Level Driver User’s Guide (available on www.amd.com and www.fujitsu.com)
for general information on Spansion Flash memory software development guidelines.
/* Example: Erase resume command */
*( (UINT16 *)bank_addr + 0x000 ) = 0x0030;
/* write resume command
*/
/* The flash needs adequate time in the resume state */
7.5.6 Program Suspend/Program Resume Commands
The Program Suspend command allows the system to interrupt an embedded programming op-
eration or a “Write to Buffer” programming operation so that data can read from any non-
suspended sector. When the Program Suspend command is written during a programming pro-
cess, the device halts the programming operation within tPSL (program suspend latency) and
updates the status bits. Addresses are “don't-cares” when writing the Program Suspend
command.
Software Functions and Sample Code
Table 7.16. Erase Suspend
(LLD Function = lld_EraseSuspendCmd)
Cycle
Operation
Byte Address
Word Address
Data
1
Write
Bank Address
00B0h
Table 7.17. Erase Resume
(LLD Function = lld_EraseResumeCmd)
Cycle
Operation
Byte Address
Word Address
Data
1
Write
Bank Address
0030h
相關PDF資料
PDF描述
S2L40U 1.4 A, SILICON, RECTIFIER DIODE
S2SD-05-24-L-02.75-SR 10 CONTACT(S), FEMALE, TWO PART BOARD CONNECTOR, IDC, SOCKET
S2SD-05-24-L-02.75-S 10 CONTACT(S), FEMALE, TWO PART BOARD CONNECTOR, IDC, SOCKET
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相關代理商/技術參數(shù)
參數(shù)描述
S29WS256N0LBFI012 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS256N0LBFI013 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 Megabit (16/8/4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
S29WS256N0LBFI110 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS256N0LBFI111 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS256N0LBFI112 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
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