參數(shù)資料
型號(hào): S29WS256N0LBFI011
廠商: Spansion Inc.
英文描述: 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
中文描述: 256/128/64兆位的CMOS 1.8伏只有同時(shí)讀/寫突發(fā)模式閃存
文件頁數(shù): 32/99頁
文件大?。?/td> 1091K
代理商: S29WS256N0LBFI011
36
S29WS-N_00_G0 January 25, 2005
Adva nce
Information
Figure 7.5. Sector Erase Operation
No
Write Unlock Cycles:
Address 555h, Data AAh
Address 2AAh, Data 55h
Write Sector Erase Cycles:
Address 555h, Data 80h
Address 555h, Data AAh
Address 2AAh, Data 55h
Sector Address, Data 30h
Write Additional
Sector Addresses
FAIL. Write reset command
to return to reading array.
PASS. Device returns
to reading array.
Wait 4
s
Perform Write Operation
Status Algorithm
Select
Additional
Sectors?
Unlock Cycle 1
Unlock Cycle 2
Yes
No
Last Sector
Selected?
Done?
DQ5 = 1?
Command Cycle 1
Command Cycle 2
Command Cycle 3
Specify first sector for erasure
Error condition (Exceeded Timing Limits)
Status may be obtained by reading DQ7, DQ6 and/or DQ2.
Poll DQ3.
DQ3 = 1?
Each additional cycle must be written within tSEA timeout
Timeout resets after each additional cycle is written
The host system may monitor DQ3 or wait tSEA to ensure
acceptance of erase commands
No limit on number of sectors
Commands other than Erase Suspend or selecting
additional sectors for erasure during timeout reset device
to reading array data
Notes:
1. See Table 12.1 for erase command sequence.
2. See the section on DQ3 for information on the sector erase timeout.
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