參數(shù)資料
型號(hào)： S29NS256PABBJW000
廠商： SPANSION LLC
元件分類： DRAM
英文描述： MirrorBit Flash Family
中文描述： 16M X 16 FLASH 1.8V PROM, 80 ns, PBGA64
封裝： 6.20 X 7.70 MM , LEAD FREE, TFBGA-64
文件頁數(shù)： 65/86頁
文件大小： 2234K
代理商： S29NS256PABBJW000
February 20, 2007 S29NS-P_00_A1
S29NS-P MirrorBit
TM
Flash Family
65
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
10.3
DC Characteristics
10.3.1
CMOS Compatible
Notes
1. Maximum I
CC
specifications are tested with V
CC
= V
CC
max.
2. The I
CC
current listed is typically less than 2 mA/MHz, with OE# at V
IH
.
3. I
CC
active while Embedded Erase or Embedded Program is in progress.
4. Device enters automatic sleep mode when addresses are stable for t
ACC
+ 20 ns. Typical sleep mode current is equal to I
CC3
.
5. Total current during accelerated programming is the sum of
V
PP
and V
CC
currents.
6. V
CCQ
= V
CC
during all ICC measurements.
7. Clock frequency 66 Mhz and in Continuous Mode.
8. For I
CC6
, when V
IH
= V
IO
, V
IL
= V
SS
.
Table 10.1
DC Characteristics—CMOS Compatible
Parameter
Description
Test Conditions
(1)
Min
Typ
Max
Unit
I
LI
Input Load Current
V
IN
= V
SS
to V
CC
, V
CC
= V
CC
max
±1
μA
I
LO
Output Leakage Current
V
OUT
= V
SS
to V
CC
, V
CC
= V
CC
max
±1
μA
I
CCB
V
CC
Active burst Read Current
CE# = V
IL
, OE# = V
,
WE# = V
IH
, burst length =
8
108 Mhz
33
44
mA
83 Mhz
26
36
mA
66 Mhz
24
33
mA
CE# = V
IL
, OE# = V
,
WE# = V
IH
, burst length =
16
108 Mhz
30
40
mA
83 Mhz
26
38
mA
66 Mhz
24
35
mA
CE# = V
IL
, OE# = V
,
WE# = V
IH
, burst length =
32
108 Mhz
25
33
mA
83 Mhz
28
40
mA
66 Mhz
26
37
mA
CE# = V
IL
, OE# = V
,
WE# = V
, burst length =
Continuous
108 Mhz
32
44
mA
83 Mhz
30
42
mA
66 Mhz
28
39
mA
I
CC1
V
Active Asynchronous Read
Current
(2)
CE# = V
IL
, OE# = V
IH
,
WE# = V
IH
10 MHz
40
80
mA
5 MHz
20
40
mA
1 MHz
10
20
mA
I
CC2
V
CC
Active Write Current
(3)
CE# = V
IL
, OE# = V
IH
,
V
PP
= VI
H
V
PP
1
5
μA
V
CC
<20
<40
mA
I
CC3
V
CC
Standby Current
(4)
CE# = RESET# =
V
CC
± 0.2 V
V
PP
1
5
μA
V
CC
20
70
μA
I
CC4
V
CC
Reset Current
RESET# = V
IL,
CLK = V
IL
150
250
μA
I
CC5
V
Active Current
(Read While Write)
CE# = V
IL
, OE# = V
IH
, V
PP
= V
IH
,
(7)
50
60
mA
I
CC6
V
CC
Sleep Current
CE# = V
IL
, OE# = V
IH
5
40
μA
I
PPW
Accelerated Program Current
(5)
CE# = V
, OE# = V
IH,
V
PP
= 9.5 V
V
PP
<7
<10
mA
V
CC
<15
<20
mA
V
IL
Input Low Voltage
–0.2
0.4
V
V
IH
Input High Voltage
V
–
0.4
V
+
0.4
V
OL
Output Low Voltage
I
OL
= 100 μA, V
CC
= V
CC
min
= V
CC
0.1
V
V
OH
Output High Voltage
I
OH
= –100 μA, V
CC
= V
CC
min
V
–
0.1
V
V
HH
Voltage for Accelerated Program
8.5
9.5
V
V
LKO
Low V
CC
Lock-out Voltage
1.4
V
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