參數(shù)資料
型號： S29NS256P0SBJW003
廠商： SPANSION LLC
元件分類： DRAM
英文描述： MirrorBit Flash Family
中文描述： 16M X 16 FLASH 1.8V PROM, 80 ns, PBGA64
封裝： 6.20 X 7.70 MM , LEAD FREE, TFBGA-64
文件頁數(shù)： 40/86頁
文件大小： 2234K
代理商： S29NS256P0SBJW003
40
S29NS-P MirrorBit
TM
Flash Family
S29NS-P_00_A1 February 20, 2007
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
to determine if the sector erase timer has timed out (See the section,
DQ3: Sector Erase Timeout State
Indicator
.) The time-out begins from the rising edge of the final WE# pulse in the command sequence.
When the Embedded Erase algorithm is complete, the bank returns to reading array data and addresses are
no longer latched. Note that while the Embedded Erase operation is in progress, the system can read data
from the non-erasing banks. The system can determine the status of the erase operation by reading DQ7 or
DQ6/DQ2 in the erasing bank. Refer to
Write Operation Status
for information on these status bits.
Once the sector erase operation has begun, only the Erase Suspend command is valid. All other commands
are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs,
the sector erase command sequence should be reinitiated once that bank has returned to reading array data,
to ensure data integrity.
Figure 6.4
illustrates the algorithm for the erase operation. Refer to
Program/Erase Operations
for
parameters and timing diagrams.
Software Functions and Sample Code
The following is a C source code example of using the sector erase function. Refer to the
Spansion Low Level
Driver User’s Guide
(available on
www.spansion.com
) for general information on Spansion Flash memory
software development guidelines.
/* Example: Sector Erase Command */
*( (UINT16 *)base_addr + 0x555 ) = 0x00AA;
*( (UINT16 *)base_addr + 0x2AA ) = 0x0055;
*( (UINT16 *)base_addr + 0x555 ) = 0x0080;
*( (UINT16 *)base_addr + 0x555 ) = 0x00AA;
*( (UINT16 *)base_addr + 0x2AA ) = 0x0055;
*( (UINT16 *)sector_address )
/* write unlock cycle 1
/* write unlock cycle 2
/* write setup command
/* write additional unlock cycle 1 */
/* write additional unlock cycle 2 */
/* write sector erase command
*/
*/
*/
= 0x0030;
*/
Table 6.17
Sector Erase
(LLD Function = lld_SectorEraseCmd)
Cycle
Description
Operation
Byte Address
Word Address
Data
1
Unlock
Write
Base + AAAh
Base + 555h
00AAh
2
Unlock
Write
Base + 554h
Base + 2AAh
0055h
3
Setup Command
Write
Base + AAAh
Base + 555h
0080h
4
Unlock
Write
Base + AAAh
Base + 555h
00AAh
5
Unlock
Write
Base + 554h
Base + 2AAh
0055h
6
Sector Erase Command
Write
Sector Address
Sector Address
0030h
Unlimited additional sectors may be selected for erase; command(s) must be written within t
SEA
.
相關PDF資料
PDF描述
S29NS256PABBJW000 MirrorBit Flash Family
S29NS256PABBJW003 MirrorBit Flash Family
S29NS512P MirrorBit Flash Family
S29NS512P0PBJW000 MirrorBit Flash Family
S29NS512P0PBJW003 MirrorBit Flash Family
相關代理商/技術參數(shù)
參數(shù)描述
S29NS256PABBJW000 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family
S29NS256PABBJW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family
S29NS512P 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family
S29NS512P0PBJW000 功能描述:閃存 512M (32MX16) 66MHz Simultaneous R/W RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S29NS512P0PBJW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family
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