參數(shù)資料
型號(hào)： S29NS128P0SBJW000
廠商： SPANSION LLC
元件分類： DRAM
英文描述： MirrorBit Flash Family
中文描述： 8M X 16 FLASH 1.8V PROM, 80 ns, PBGA64
封裝： 6.20 X 7.70 MM , LEAD FREE, TFBGA-64
文件頁(yè)數(shù)： 82/86頁(yè)
文件大?。?/td> 2234K
代理商： S29NS128P0SBJW000
82
S29NS-P MirrorBit
TM
Flash Family
S29NS-P_00_A1 February 20, 2007
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
Table 11.3
CFI Query Identification String
Addresses
Data
Description
10h
11h
12h
0051h
0052h
0059h
Query Unique ASCII string
QRY
13h
14h
0002h
0000h
Primary OEM Command Set
15h
16h
0040h
0000h
Address for Primary Extended Table
17h
18h
0000h
0000h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
0000h
0000h
Address for Alternate OEM Extended Table (00h = none exists)
Table 11.4
System Interface String
Addresses
Data
Description
1Bh
0017h
V
Min. (write/erase)
D7 – D4: volt, D3 – D0: 100 millivolt
1Ch
0019h
V
Max. (write/erase)
D7 – D4: volt, D3 – D0: 100 millivolt
1Dh
0000h
V
PP
Min. voltage (00h = no V
PP
pin present)
1Eh
0000h
V
PP
Max. voltage (00h = no V
PP
pin present)
Typical Program Time per single word write 2
N
μs (for example, 30 μs)
1Fh
0005h
20h
0009h
Typical Program Time using buffer 2
N
μs (for example, 300us) (00h = not supported)
21h
000Ah
Typical time for sector erase 2
N
ms
22h
0000h
Typical time for full chip erase 2
N
ms (00h = not supported)
23h
0003h
Max. Program Time per single word [2
N
times typical value]
24h
0002h
Max. Program Time using buffer [2
N
times typical value]
25h
0002h
Max. time for sector erase [2
N
times typical value]
26h
0000h
Max. time for full chip erase [2
N
times typical value] (00h = not supported)
Table 11.5
Device Geometry Definition (Sheet 1 of 2)
Addresses
Data
Description
27h
0018h (NS128P)
0019h (NS256P)
001Ah (NS512P)
Device Size = 2
N
byte
28h
29h
0001h
0000h
Flash Device Interface 0h=x8; 1h=x16; 2h=x8/x16; 3h=x32 [lower byte]
[upper byte] (00h = not supported)
2Ah
2Bh
0006h
0000h
Max. number of bytes in multi-byte buffer write = 2
N
[lower byte]
[upper byte] (00h = not supported)
2Ch
0002h (NS128P)
0002h (NS256P)
0001h (NS512P)
Number of Erase Block Regions within device
01h = Uniform Sector; 02h = Boot + Uniform; 03h = Boot + Uniform + Boot
2Dh
007Eh (NS128P)
00FEh (NS256P)
01FFh (NS512P)
Erase Block Region 1 Information (Large Sector Section)
[lower byte] – Number of sectors. 00h=1 sector; 01h=2 sectors... 03h=4 sectors
[upper byte]
[lower byte] – Equation =>(n = Density in Bytes of any 1 sector/256)h
[upper byte]
2Eh
0000h
2Fh
0000h
30h
0002h
31h
0003h (NS128P)
0003h (NS256P)
0000h (NS512P)
Erase Block Region 2 Information (Small Sector Section)
[lower byte] – Number of sectors.
[upper byte]
[lower byte] – Equation =>(n = Density in Bytes of any 1 sector/256)h
[upper byte]
32h
0000h
33h
0080h (NS128P)
0080h (NS256P)
0000h (NS512P)
34h
0000h
相關(guān)PDF資料
PDF描述
S29NS128P0SBJW003 MirrorBit Flash Family
S29NS128PABBJW000 MirrorBit Flash Family
S29NS128PABBJW003 MirrorBit Flash Family
S29NS256P MirrorBit Flash Family
S29NS256P0PBJW000 MirrorBit Flash Family
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29NS128P0SBJW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family
S29NS128PABBJW000 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family
S29NS128PABBJW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family
S29NS256N 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 Megabit (16/8/4M x 16-bit), CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
S29NS256N0PBJW000 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
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