參數(shù)資料
型號: S29GL256M10TAIR20
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
中文描述: 16M X 16 FLASH 3V PROM, 100 ns, PDSO56
封裝: MO-142EC, TSOP-56
文件頁數(shù): 132/160頁
文件大?。?/td> 2142K
代理商: S29GL256M10TAIR20
132
S29GLxxxM MirrorBit
TM
Flash Family
S29GLxxxM_00A5 April 30, 2004
P r e l i m i n a r y
AC Characteristics
Notes:
1. PA = program address, PD = program data, D
OUT
is the true data at the program address.
2. Illustration shows device in word mode.
Figure 16. Program Operation Timings
Figure 17. Accelerated Program Timing Diagram
OE#
WE#
CE#
V
CC
Data
Addresses
t
DS
t
AH
t
DH
t
WP
PD
t
WHWH1
t
WC
t
AS
t
WPH
t
VCS
555h
PA
PA
Read Status Data (last two cycles)
A0h
t
POLL
t
CS
Status
D
OUT
RY/BY#
t
RB
t
BUSY
t
CH
PA
Program Command Sequence (last two cycles)
ACC
t
t
VHH
V
V
HH
V
IH
V
IL
or V
IH
V
IL
IH
V
IL
or V
IH
t
t
VHH
相關(guān)PDF資料
PDF描述
S29GL256M10TAIR22 MOSFET, Switching; VDSS (V): 200; ID (A): 0.5; Pch : -; RDS (ON) typ. (ohm) @10V: 1.6; RDS (ON) typ. (ohm) @4V[4.5V]: 1.9; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 120; toff (µs) typ: -; Package: TSSOP-8
S29GL256M10TAIR23 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL256M10TFIR10 MOSFET, Switching; VDSS (V): 60; ID (A): 6; Pch : 2?3?; RDS (ON) typ. (ohm) @10V: 0.028; RDS (ON) typ. (ohm) @4V[4.5V]: [0.04]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1000; toff (µs) typ: 0.06; Package: SOP-8
S29GL256M10TFIR12 MOSFET, Switching; VDSS (V): 60; ID (A): 6; Pch : 2/3; RDS (ON) typ. (ohm) @10V: 0.028; RDS (ON) typ. (ohm) @4V[4.5V]: [0.04]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1000; toff (µs) typ: 0.06; Package: SOP-8
S29GL256M10TFIR13 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
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