參數(shù)資料
型號： S29GL256M10TAIR20
廠商： SPANSION LLC
元件分類： DRAM
英文描述： 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
中文描述： 16M X 16 FLASH 3V PROM, 100 ns, PDSO56
封裝： MO-142EC, TSOP-56
文件頁數(shù)： 130/160頁
文件大小： 2142K
代理商： S29GL256M10TAIR20
130
S29GLxxxM MirrorBit
TM
Flash Family
S29GLxxxM_00A5 April 30, 2004
P r e l i m i n a r y
AC Characteristics
Erase and Program Operations-S29GL064M only
Notes:
1.
Not 100% tested.
2.
See the “Erase and Programming Performance” section for more information.
3.
For 1–16 words/1–32 bytes programmed.
4.
If a program suspend command is issued within t
, the device requires t
before reading status data, once programming has resumed
(that is, the program resume command has been written). If the suspend command was issued after t
POLL
, status data is available
immediately after programming has resumed. See Figure 17.
Parameter
Speed Options
Unit
JEDEC
Std.
Description
90
10
11
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
90
100
110
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
t
WLAX
t
AH
Address Hold Time
Min
45
ns
t
AHT
Address Hold Time From CE# or OE# high during toggle bit
polling
Min
0
ns
t
DVWH
t
DS
Data Setup Time
Min
35
ns
t
WHDX
t
DH
Data Hold Time
Min
0
ns
t
CEPH
CE# High during toggle bit polling
Min
20
ns
t
OEPH
OE# High during toggle bit polling
Min
20
ns
t
GHWL
t
GHWL
Read Recovery Time Before Write (OE# High to WE# Low)
Min
0
ns
t
ELWL
t
CS
CE# Setup Time
Min
0
ns
t
WHEH
t
CH
CE# Hold Time
Min
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
35
ns
t
WHDL
t
WPH
Write Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation (Notes 2, 3)
Typ
240
μs
Single Word Program Operation (Note 2)
Typ
60
Accelerated Single Word Program Operation (Note 2)
Typ
54
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.5
sec
t
VHH
V
HH
Rise and Fall Time (Note 1)
Min
250
ns
t
VCS
V
CC
Setup Time (Note 1)
Min
50
μs
t
BUSY
WE# High to RY/BY# Low
Min
90
100
110
ns
t
POLL
Program Valid before Status Polling
Max
4
μs
相關(guān)PDF資料
PDF描述
S29GL256M10TAIR22 MOSFET, Switching; VDSS (V): 200; ID (A): 0.5; Pch : -; RDS (ON) typ. (ohm) @10V: 1.6; RDS (ON) typ. (ohm) @4V[4.5V]: 1.9; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 120; toff (µs) typ: -; Package: TSSOP-8
S29GL256M10TAIR23 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL256M10TFIR10 MOSFET, Switching; VDSS (V): 60; ID (A): 6; Pch : 2?3?; RDS (ON) typ. (ohm) @10V: 0.028; RDS (ON) typ. (ohm) @4V[4.5V]: [0.04]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1000; toff (µs) typ: 0.06; Package: SOP-8
S29GL256M10TFIR12 MOSFET, Switching; VDSS (V): 60; ID (A): 6; Pch : 2/3; RDS (ON) typ. (ohm) @10V: 0.028; RDS (ON) typ. (ohm) @4V[4.5V]: [0.04]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1000; toff (µs) typ: 0.06; Package: SOP-8
S29GL256M10TFIR13 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL256M11FAIR10 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 110ns 64-Pin Fortified BGA Tray
S29GL256M11FAIR12 制造商:Spansion 功能描述:256M (32MX8/16MX16) 3V REG, MIRRORBIT, FBGA64 IND - Trays
S29GL256M11FAIR2 制造商:Spansion 功能描述:NOR Flash, 16M x 16, 64 Pin, Plastic, BGA
S29GL256M11FAIR20 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 110ns 64-Pin Fortified BGA Tray
S29GL256M11FFIR10 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 256Mbit 32M/16M x 8bit/16bit 110ns 64-Pin Fortified BGA Tray 制造商:Spansion 功能描述:Flash Memory IC
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