參數(shù)資料
型號: S29GL256M10TAIR13
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
中文描述: 16M X 16 FLASH 3V PROM, 100 ns, PDSO56
封裝: MO-142EC, TSOP-56
文件頁數(shù): 58/160頁
文件大?。?/td> 2142K
代理商: S29GL256M10TAIR13
58
S29GLxxxM MirrorBit
TM
Flash Family
S29GLxxxM_00A5 April 30, 2004
P r e l i m i n a r y
SA113
1
1
1
0
0
0
1
388000–38FFFF
SA114
1
1
1
0
0
1
0
390000–397FFF
SA115
1
1
1
0
0
1
1
398000–39FFFF
SA116
1
1
1
0
1
0
0
3A0000–3A7FFF
SA117
1
1
1
0
1
0
1
3A8000–3AFFFF
SA118
1
1
1
0
1
1
0
3B0000–3B7FFF
SA119
1
1
1
0
1
1
1
3B8000–3BFFFF
SA120
1
1
1
1
0
0
0
3C0000–3C7FFF
SA121
1
1
1
1
0
0
1
3C8000–3CFFFF
SA122
1
1
1
1
0
1
0
3D0000–3D7FFF
SA123
1
1
1
1
0
1
1
3D8000–3DFFFF
SA124
1
1
1
1
1
0
0
3E0000–3E7FFF
SA125
1
1
1
1
1
0
1
3E8000–3EFFFF
SA126
1
1
1
1
1
1
0
3F0000–3F7FFF
SA127
1
1
1
1
1
1
1
3F8000–3FFFFF
Table 11. S29GL064M (Model R6, R7) Sector Address Table
Sector
A21–A15
16-bit
Address Range
(in hexadecimal)
SA0
0
0
0
0
0
0
0
000000–007FFF
SA1
0
0
0
0
0
0
1
008000–00FFFF
SA2
0
0
0
0
0
1
0
010000–017FFF
SA3
0
0
0
0
0
1
1
018000–01FFFF
SA4
0
0
0
0
1
0
0
020000–027FFF
SA5
0
0
0
0
1
0
1
028000–02FFFF
SA6
0
0
0
0
1
1
0
030000–037FFF
SA7
0
0
0
0
1
1
1
038000–03FFFF
SA8
0
0
0
1
0
0
0
040000–047FFF
SA9
0
0
0
1
0
0
1
048000–04FFFF
SA10
0
0
0
1
0
1
0
050000–057FFF
SA11
0
0
0
1
0
1
1
058000–05FFFF
SA12
0
0
0
1
1
0
0
060000–067FFF
SA13
0
0
0
1
1
0
1
068000–06FFFF
SA14
0
0
0
1
1
1
0
070000–077FFF
SA15
0
0
0
1
1
1
1
078000–07FFFF
SA16
0
0
1
0
0
0
0
080000–087FFF
SA17
0
0
1
0
0
0
1
088000–08FFFF
SA18
0
0
1
0
0
1
0
090000–097FFF
SA19
0
0
1
0
0
1
1
098000–09FFFF
SA20
0
0
1
0
1
0
0
0A0000–0A7FFF
SA21
0
0
1
0
1
0
1
0A8000–0AFFFF
SA22
0
0
1
0
1
1
0
0B0000–0B7FFF
SA23
0
0
1
0
1
1
1
0B8000–0BFFFF
SA24
0
0
1
1
0
0
0
0C0000–0C7FFF
Table 10. S29GL064M (Model R5) Sector Address Table (Continued)
Sector
A21–A15
16-bit
Address Range
(in hexadecimal)
相關(guān)PDF資料
PDF描述
S29GL256M10TAIR20 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL256M10TAIR22 MOSFET, Switching; VDSS (V): 200; ID (A): 0.5; Pch : -; RDS (ON) typ. (ohm) @10V: 1.6; RDS (ON) typ. (ohm) @4V[4.5V]: 1.9; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 120; toff (µs) typ: -; Package: TSSOP-8
S29GL256M10TAIR23 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL256M10TFIR10 MOSFET, Switching; VDSS (V): 60; ID (A): 6; Pch : 2?3?; RDS (ON) typ. (ohm) @10V: 0.028; RDS (ON) typ. (ohm) @4V[4.5V]: [0.04]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1000; toff (µs) typ: 0.06; Package: SOP-8
S29GL256M10TFIR12 MOSFET, Switching; VDSS (V): 60; ID (A): 6; Pch : 2/3; RDS (ON) typ. (ohm) @10V: 0.028; RDS (ON) typ. (ohm) @4V[4.5V]: [0.04]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1000; toff (µs) typ: 0.06; Package: SOP-8
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