參數(shù)資料
型號： S29GL256M10FFIR22
廠商： SPANSION LLC
元件分類： DRAM
英文描述： 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
中文描述： 16M X 16 FLASH 3V PROM, 100 ns, PBGA64
封裝： 18 X 12 MM, LEAD FREE, FORTIFIED, BGA-64
文件頁數(shù)： 158/160頁
文件大小： 2142K
代理商： S29GL256M10FFIR22
158
S29GLxxxM MirrorBit
TM
Flash Family
S29GLxxxM_00A5 April 30, 2004
P r e l i m i n a r y
Revision Summary
Revision A (January 29, 2004)
Initial Release.
Revision A+1 (February 23, 2004)
Connection Diagrams
Removed 80-ball Fine-pitch BGA pinout.
Ordering Information
Added additional packing type.
Removed frame description from package material set.
Updated valid combinations to reflect the addition of new package type.
Added marking descriptions to all valid combination tables.
Word Program Command Sequence and Unlock Bypass Command
Sequence
Added these sections.
Figure 3, “Write Buffer Programming Operation“, Figure 4, “Program
Operation“
Updated figure.
Table 31, “Command Definitions (x16 Mode, BYTE# = V
IH
),”
Updated table.
Added note 19.
Table 32, “Command Definitions (x8 Mode, BYTE# = V
IL
),”
Updated table.
Added note 17.
Figure 7, “Data# Polling Algorithm“
Updated figure.
Erase and Program Operations and Alternate CE# Controlled Erase and
Program Operations
Updated T
WHWHI
description
Added Note 4.
Figure 16, “Program Operation Timings“, Figure 18, “Chip/Sector Erase
Operation Timings“, Figure 20, “Toggle Bit Timings (During Embedded
Algorithms)“, Figure 24, “Alternate CE# Controlled Write (Erase/
Program) Operation Timings“
Updated figure.
Physical Dimensions
Removed BGA-63P-M02 and BGA-80P-M01
Added the TS040 package
Revision A+2 (February 25, 2004)
Connection Diagrams
Removed the 40-pin reverse TSOP diagram.
相關(guān)PDF資料
PDF描述
S29GL256M10TAIR10 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL256M10TAIR12 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL256M10TAIR13 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL256M10TAIR20 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL256M10TAIR22 MOSFET, Switching; VDSS (V): 200; ID (A): 0.5; Pch : -; RDS (ON) typ. (ohm) @10V: 1.6; RDS (ON) typ. (ohm) @4V[4.5V]: 1.9; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 120; toff (µs) typ: -; Package: TSSOP-8
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL256M10TAIR10 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 100ns 56-Pin TSOP Tray
S29GL256M11FAIR10 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 110ns 64-Pin Fortified BGA Tray
S29GL256M11FAIR12 制造商:Spansion 功能描述:256M (32MX8/16MX16) 3V REG, MIRRORBIT, FBGA64 IND - Trays
S29GL256M11FAIR2 制造商:Spansion 功能描述:NOR Flash, 16M x 16, 64 Pin, Plastic, BGA
S29GL256M11FAIR20 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 110ns 64-Pin Fortified BGA Tray
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