參數(shù)資料
型號： S29GL256M10FFIR22
廠商： SPANSION LLC
元件分類： DRAM
英文描述： 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
中文描述： 16M X 16 FLASH 3V PROM, 100 ns, PBGA64
封裝： 18 X 12 MM, LEAD FREE, FORTIFIED, BGA-64
文件頁數(shù)： 125/160頁
文件大?。?/td> 2142K
代理商： S29GL256M10FFIR22
April 30, 2004 S29GLxxxM_00A5
S29GLxxxM MirrorBit
TM
Flash Family
125
P r e l i m i n a r y
AC Characteristics
Read-Only Operations-S29GL064M only
Parameter
JEDEC
Std.
Notes:
1. Not 100% tested.
2. See
Figure 11
and Table
34
for test specifications.
Read-Only Operations-S29GL032M only
Parameter
JEDEC
Std.
Notes:
1. Not 100% tested.
2. See
Figure 11
and Table
34
for test specifications.
Description
Test Setup
Speed Options
90
Unit
10
11
t
AVAV
t
RC
Read Cycle Time (Note 1)
Min
90
100
110
ns
t
AVQV
t
ACC
Address to Output Delay
CE#, OE# = V
IL
Max
90
100
110
ns
t
ELQV
t
CE
Chip Enable to Output Delay
OE# = V
IL
Max
90
100
110
ns
t
PACC
Page Access Time
Max
25
30
30
ns
t
GLQV
t
OE
Output Enable to Output Delay
Max
25
30
30
ns
t
EHQZ
t
DF
Chip Enable to Output High Z (Note 1)
Max
16
ns
t
GHQZ
t
DF
Output Enable to Output High Z (Note 1)
Max
16
ns
t
AXQX
t
OH
Output Hold Time From Addresses, CE# or OE#,
Whichever Occurs First
Min
0
ns
t
OEH
Output Enable Hold
Time (Note 1)
Read
Min
0
ns
Toggle and
Data# Polling
Min
10
ns
Description
Test Setup
Speed Options
90
10
Unit
11
t
AVAV
t
RC
Read Cycle Time (Note 1)
Min
90
100
110
ns
t
AVQV
t
ACC
Address to Output Delay
CE#, OE# = V
IL
Max
90
100
110
ns
t
ELQV
t
CE
Chip Enable to Output Delay
OE# = V
IL
Max
90
100
110
ns
t
PACC
Page Access Time
Max
25
30
30
ns
t
GLQV
t
OE
Output Enable to Output Delay
Max
25
30
30
ns
t
EHQZ
t
DF
Chip Enable to Output High Z (Note 1)
Max
16
ns
t
GHQZ
t
DF
Output Enable to Output High Z (Note 1)
Max
16
ns
t
AXQX
t
OH
Output Hold Time From Addresses, CE# or OE#,
Whichever Occurs First
Min
0
ns
t
OEH
Output Enable Hold
Time (Note 1)
Read
Min
0
ns
Toggle and
Data# Polling
Min
10
ns
相關(guān)PDF資料
PDF描述
S29GL256M10TAIR10 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL256M10TAIR12 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL256M10TAIR13 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL256M10TAIR20 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL256M10TAIR22 MOSFET, Switching; VDSS (V): 200; ID (A): 0.5; Pch : -; RDS (ON) typ. (ohm) @10V: 1.6; RDS (ON) typ. (ohm) @4V[4.5V]: 1.9; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 120; toff (µs) typ: -; Package: TSSOP-8
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL256M10TAIR10 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 100ns 56-Pin TSOP Tray
S29GL256M11FAIR10 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 110ns 64-Pin Fortified BGA Tray
S29GL256M11FAIR12 制造商:Spansion 功能描述:256M (32MX8/16MX16) 3V REG, MIRRORBIT, FBGA64 IND - Trays
S29GL256M11FAIR2 制造商:Spansion 功能描述:NOR Flash, 16M x 16, 64 Pin, Plastic, BGA
S29GL256M11FAIR20 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 110ns 64-Pin Fortified BGA Tray
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