參數(shù)資料
型號(hào)： S29GL128P10TAI012
廠商： Spansion Inc.
英文描述： 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
中文描述： 3.0伏只頁(yè)面模式閃存具有90納米MirrorBit工藝技術(shù)
文件頁(yè)數(shù)： 63/77頁(yè)
文件大?。?/td> 2121K
代理商： S29GL128P10TAI012
November 8, 2007 S29GL-P_00_A7
S29GL-P MirrorBit
Flash Family
63
D a t a
S h e e t
( P r e l i m i n a r y )
Figure 11.13
Toggle Bit Timings (During Embedded Algorithms)
Note
A = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read cycle, and array data read cycle
CE# does not need to go high between status bit reads
Figure 11.14
DQ2 vs. DQ6
Note
DQ2 toggles only when read at an address within an erase-suspended sector. The system can use OE# or CE# to toggle DQ2 and DQ6.
OE#
CE#
WE#
Addresses
t
OEH
t
DH
t
AHT
t
ASO
t
OEPH
t
OE
Valid Data
(first read)
(second read)
(stops toggling)
t
CEPH
t
AHT
t
AS
DQ2 and DQ6
Valid Data
Valid
Status
Valid
Status
Valid
Status
RY/BY#
Enter
Erase
Erase
Resume
Erase
Enter Erase
Suspend Program
Erase Suspend
Read
Erase Suspend
Read
Erase
Suspend
Program
WE#
DQ6
DQ2
Erase
Complete
Erase
Suspend
Embedded
Erasing
相關(guān)PDF資料
PDF描述
S29GL128P10TAIR10 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL128P10TAIR12 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL128P10TAIV10 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL128P90TFIV12 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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S29GL128P10TFI010-AU 制造商:Spansion 功能描述:SPZS29GL128P10TFI010-AU IC 128M PAGE-MO
S29GL128P10TFI012 制造商:Spansion 功能描述:IC 128M PAGE-MODE FLASH MEMORY - Trays
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