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參數資料
| 型號： | S29GL128P10FFIV12 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| 中文描述： | 128M X 1 FLASH 3V PROM, 100 ns, PBGA64 |
| 封裝： | 13 X 11 MM, 1 MM PITCH, LEAD FREE, FBGA-64 |
| 文件頁數： | 12/77頁 |
| 文件大?。?/td> | 2121K |
| 代理商： | S29GL128P10FFIV12 |
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12
S29GL-P MirrorBit
Flash Family
S29GL-P_00_A7 November 8, 2007
D a t a
S h e e t
( P r e l i m i n a r y )
3.
Block Diagram
Figure 3.1
S29GL-P Block Diagram
4.
Physical Dimensions/Connection Diagrams
This section shows the I/O designations and package specifications for the S29GL-P family.
4.1
Related Documents
The following documents contain information relating to the S29GL-P devices. Click on the title or go to
www.spansion.com download the PDF file, or request a copy from your sales office.
Considerations for X-ray Inspection of Surface-Mounted Flash Integrated Circuits
4.2
Special Handling Instructions for BGA Package
Special handling is required for Flash Memory products in BGA packages.
Flash memory devices in BGA packages may be damaged if exposed to ultrasonic cleaning methods. The
package and/or data integrity may be compromised if the package body is exposed to temperatures above
150°C for prolonged periods of time.
Input/Output
Buffers
X-Decoder
Y-Decoder
Chip Enable
Output Enable
Logic
Erase Voltage
Generator
PGM Voltage
Generator
Timer
V
CC
Detector
State
Control
Command
Register
V
CC
V
SS
V
IO
WE#
WP#/ACC
BYTE#
CE#
OE#
STB
STB
DQ15
–
DQ0
Sector Switches
RY/BY#
RESET#
Data
Latch
Y-Gating
Cell Matrix
A
A
Max
**–A0 (A-1)
** A
Max
GL01GP=A25, A
Max
GL512P = A24, A
Max
GL256P = A23, A
Max
GL128P = A22
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| S29GL128P10TAI010 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P10TAI012 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P10TAIR10 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P10TAIR12 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P10TAIV10 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
相關代理商/技術參數 |
參數描述 |
|---|---|
| S29GL128P10TAI010 | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 128Mbit 16M/8M x 8bit/16bit 100ns 56-Pin TSOP Tray 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 100NS 56TSOP - Trays |
| S29GL128P10TAI020 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 100NS 56TSOP - Trays |
| S29GL128P10TFI010 | 功能描述:閃存 128Mb 3V 110ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29GL128P10TFI010 | 制造商:Spansion 功能描述:IC SM FLASH 3V 128MB 100NS |
| S29GL128P10TFI010-AU | 制造商:Spansion 功能描述:SPZS29GL128P10TFI010-AU IC 128M PAGE-MO |
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