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參數(shù)資料
| 型號： | S29GL128P10FFIR12 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| 中文描述： | 128M X 1 FLASH 3V PROM, 100 ns, PBGA64 |
| 封裝： | 13 X 11 MM, 1 MM PITCH, LEAD FREE, FBGA-64 |
| 文件頁數(shù)： | 9/77頁 |
| 文件大?。?/td> | 2121K |
| 代理商： | S29GL128P10FFIR12 |
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November 8, 2007 S29GL-P_00_A7
S29GL-P MirrorBit
Flash Family
9
D a t a
S h e e t
( P r e l i m i n a r y )
1.
Ordering Information
The ordering part number is formed by a valid combination of the following:
S29GL01GP
12
F
F
I
01
0
PACKING TYPE
0
= Tray (standard; see
(Note 4)
2
= 7” Tape and Reel
3
= 13” Tape and Reel
MODEL NUMBER (V
IO
range, protection when WP# =V
IL
)
01 = V
IO
= V
CC
= 2.7 to 3.6 V, highest address sector protected
02 = V
IO
= V
CC
= 2.7 to 3.6 V, lowest address sector protected
V1 = V
IO
= 1.65 to V
CC
, V
CC
= 2.7 to 3.6 V, highest address sector protected
V2 = V
IO
= 1.65 to V
CC
, V
CC
= 2.7 to 3.6 V, lowest address sector protected
R1 = V
IO
= V
CC
= 3.0 to 3.6 V, highest address sector protected
R2 = V
IO
= V
CC
= 3.0 to 3.6 V, lowest address sector protected
TEMPERATURE RANGE
I
= Industrial (–40°C to +85°C)
PACKAGE MATERIALS SET
A = Pb
(Note 1)
F
= Pb-free
PACKAGE TYPE
T
= 56-pin Thin Small Outline Package (TSOP) Standard Pinout(TSO56)
F
= 64-ball Fortified Ball Grid Array, 1.0 mm pitch package (LAA064)
SPEED OPTION
90 = 90 ns
10 = 100 ns
11 = 110 ns
12 = 120 ns
13 = 130 ns
DEVICE NUMBER/DESCRIPTION
S29GL01GP, S29GL512P, S29GL256P, S29GL128P
3.0 Volt-only, 1024, 512, 256 and 128 Megabit Page-Mode Flash Memory, manufactured on 90 nm MirrorBit
process technology
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29GL128P10FFIV10 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P10FFIV12 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P10TAI010 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P10TAI012 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P10TAIR10 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL128P10FFIS10 | 功能描述:閃存 128MB 3.0V 100ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29GL128P10FFIS20 | 制造商:Spansion 功能描述:IC 128M PAGE-MODE FLASH MEMORY - Trays |
| S29GL128P10FFIS22 | 制造商:Spansion 功能描述:IC FLASH MEMORY - Tape and Reel |
| S29GL128P10TAI010 | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 128Mbit 16M/8M x 8bit/16bit 100ns 56-Pin TSOP Tray 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 100NS 56TSOP - Trays |
| S29GL128P10TAI020 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 100NS 56TSOP - Trays |
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