參數(shù)資料
型號(hào)： S29GL128P10FFIR12
廠商： SPANSION LLC
元件分類： DRAM
英文描述： 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
中文描述： 128M X 1 FLASH 3V PROM, 100 ns, PBGA64
封裝： 13 X 11 MM, 1 MM PITCH, LEAD FREE, FBGA-64
文件頁(yè)數(shù)： 40/77頁(yè)
文件大?。?/td> 2121K
代理商： S29GL128P10FFIR12
40
S29GL-P MirrorBit
Flash Family
S29GL-P_00_A7 November 8, 2007
D a t a
S h e e t
( P r e l i m i n a r y )
Notes
1. DQ5 switches to
1
when an Embedded Program, Embedded Erase, or Write-to-Buffer operation has exceeded the maximum timing limits.
Refer to
DQ5: Exceeded Timing Limits on page 39
for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
3. The Data# Polling algorithm should be used to monitor the last loaded write-buffer address location.
4. DQ1 switches to 1 when the device has aborted the write-to-buffer operation
7.9
Writing Commands/Command Sequences
During a write operation, the system must drive CE# and WE# to V
IL
and OE# to V
IH
when providing an
address, command, and data. Addresses are latched on the last falling edge of WE# or CE#, while data is
latched on the 1st rising edge of WE# or CE#. An erase operation can erase one sector, multiple sectors, or
the entire device.
Table 6.2
–
Table 6.3
indicate the address space that each sector occupies. The device
address space is divided into uniform 64KW/128KB sectors. A sector address is the set of address bits
required to uniquely select a sector. I
CC2
in “DC Characteristics” represents the active current specification for
the write mode. “AC Characteristics” contains timing specification tables and timing diagrams for write
operations.
7.9.1
RY/BY#
The RY/BY# is a dedicated, open-drain output pin that indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command
sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a
pull-up resistor to V
CC
. This feature allows the host system to detect when data is ready to be read by simply
monitoring the RY/BY# pin, which is a dedicated output and controlled by CE# (not OE#).
7.9.2
Hardware Reset
The RESET# input provides a hardware method of resetting the device to reading array data. When RESET#
is driven low for at least a period of t
RP
(RESET# Pulse Width), the device immediately terminates any
operation in progress, tristates all outputs, resets the configuration register, and ignores all read/write
commands for the duration of the RESET# pulse. The device also resets the internal state machine to reading
array data.
To ensure data integrity Program/Erase operations that were interrupted should be reinitiated once the device
is ready to accept another command sequence.
When RESET# is held at V
SS
, the device draws V
CC
reset current (I
CC5
). If RESET# is held at V
IL
, but not at
V
SS
, the standby current is greater. RESET# may be tied to the system reset circuitry which enables the
system to read the boot-up firmware from the Flash memory upon a system reset. See
Figure 11.7
on page 58
and
Figure 11.8 on page 59
for timing diagrams.
Table 7.17
Write Operation Status
Status
DQ7
(Note 2)
DQ6
DQ5
(Note 1)
DQ3
DQ2
(Note 2)
DQ1
RY/
BY#
Standard
Mode
Embedded Program Algorithm
DQ7#
Toggle
0
N/A
No toggle
0
0
Embedded Erase Algorithm
0
Toggle
0
1
Toggle
N/A
0
Program
Suspend
Mode
Program-
Suspend
Read
Program-Suspended
Sector
Invalid (not allowed)
1
Non-Program
Suspended Sector
Data
1
Erase
Suspend
Mode
Erase-
Suspend
Read
Erase-Suspended
Sector
1
No toggle
0
N/A
Toggle
N/A
1
Non-Erase
Suspended Sector
Data
1
Erase-Suspend-Program
(Embedded Program)
DQ7#
Toggle
0
N/A
N/A
N/A
0
Write-to-
Buffer
Busy
(Note 3)
DQ7#
Toggle
0
N/A
N/A
0
0
Abort
(Note 4)
DQ7#
Toggle
0
N/A
N/A
1
0
相關(guān)PDF資料
PDF描述
S29GL128P10FFIV10 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL128P10FFIV12 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL128P10TAI010 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL128P10TAI012 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL128P10TAIR10 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL128P10FFIS10 功能描述:閃存 128MB 3.0V 100ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S29GL128P10FFIS20 制造商:Spansion 功能描述:IC 128M PAGE-MODE FLASH MEMORY - Trays
S29GL128P10FFIS22 制造商:Spansion 功能描述:IC FLASH MEMORY - Tape and Reel
S29GL128P10TAI010 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 128Mbit 16M/8M x 8bit/16bit 100ns 56-Pin TSOP Tray 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 100NS 56TSOP - Trays
S29GL128P10TAI020 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 100NS 56TSOP - Trays
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