- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄192297 > S29GL032M10TAIR30 (SPANSION LLC) Conductive Polymer Chip Capacitors / T530 Series - High Capacitance/Ultra-Low ESR; Capacitance [nom]: 680uF; Working Voltage (Vdc)[max]: 4V; Capacitance Tolerance: +/-20%; Dielectric: Conductive Polymer; ESR: 5.0mΩ; Lead Style: Surface-Mount Chip; Lead Dimensions: 7343-40; Termination: 100% Tin (Sn); Body Dimensions: 7.3mm x 4.3mm x 4mm; Temperature Range: -55C to +125C; Container: Tape & Reel; Qty per Container: 500; Features: High Capacitance; Ultra-Low ESR PDF資料下載
參數(shù)資料
| 型號(hào)： | S29GL032M10TAIR30 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | Conductive Polymer Chip Capacitors / T530 Series - High Capacitance/Ultra-Low ESR; Capacitance [nom]: 680uF; Working Voltage (Vdc)[max]: 4V; Capacitance Tolerance: +/-20%; Dielectric: Conductive Polymer; ESR: 5.0mΩ; Lead Style: Surface-Mount Chip; Lead Dimensions: 7343-40; Termination: 100% Tin (Sn); Body Dimensions: 7.3mm x 4.3mm x 4mm; Temperature Range: -55C to +125C; Container: Tape & Reel; Qty per Container: 500; Features: High Capacitance; Ultra-Low ESR |
| 中文描述： | 2M X 16 FLASH 3V PROM, 100 ns, PDSO48 |
| 封裝： | MO-142EC, TSOP-48 |
| 文件頁(yè)數(shù)： | 81/116頁(yè) |
| 文件大小： | 6024K |
| 代理商： | S29GL032M10TAIR30 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)第72頁(yè)第73頁(yè)第74頁(yè)第75頁(yè)第76頁(yè)第77頁(yè)第78頁(yè)第79頁(yè)第80頁(yè)當(dāng)前第81頁(yè)第82頁(yè)第83頁(yè)第84頁(yè)第85頁(yè)第86頁(yè)第87頁(yè)第88頁(yè)第89頁(yè)第90頁(yè)第91頁(yè)第92頁(yè)第93頁(yè)第94頁(yè)第95頁(yè)第96頁(yè)第97頁(yè)第98頁(yè)第99頁(yè)第100頁(yè)第101頁(yè)第102頁(yè)第103頁(yè)第104頁(yè)第105頁(yè)第106頁(yè)第107頁(yè)第108頁(yè)第109頁(yè)第110頁(yè)第111頁(yè)第112頁(yè)第113頁(yè)第114頁(yè)第115頁(yè)第116頁(yè)
February 7, 2007 S29GL-M_00_B8
S29GL-M MirrorBitTM Flash Family
65
Data
Sheet
Figure 4. Program Operation
Program Suspend/Program Resume Command Sequence
The Program Suspend command allows the system to interrupt a programming operation or a
Write to Buffer programming operation so that data can be read from any non-suspended sector.
When the Program Suspend command is written during a programming process, the device halts
the program operation within 15 s maximum (5 s typical) and updates the status bits. Ad-
dresses are not required when writing the Program Suspend command.
After the programming operation is suspended, the system can read array data from any non-
suspended sector. The Program Suspend command can also be issued during a programming op-
eration while an erase is suspended. In this case, data can be read from any addresses not in
Erase Suspend or Program Suspend. If a read is needed from the Secured Silicon Sector area
(One-time Program area), then user must use the proper command sequences to enter and exit
this region. Note that the Secured Silicon Sector, autoselect, and CFI functions are unavailable
when a program operation is in progress.
The system can also write the autoselect command sequence when the device is in the Program
Suspend mode. The system can read as many autoselect codes as required. When the device
exits the autoselect mode, the device reverts to the Program Suspend mode, and is ready for an-
other valid operation. See Autoselect Command Sequence for more information.
After the Program Resume command is written, the device reverts to programming. The system
can determine the status of the program operation using the DQ7 or DQ6 status bits, just as in
the standard program operation. See Write Operation Status for more information.
The system must write the Program Resume command (address bits are don’t care) to exit the
Program Suspend mode and continue the programming operation. Further writes of the Resume
command are ignored. Another Program Suspend command can be written after the device re-
sumes programming.
START
Write Program
Command Sequence
Data Poll
from System
Verify Data?
No
Yes
Last Address?
No
Yes
Programming
Completed
Increment Address
Embedded
Program
algorithm
in progress
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29GL032M10TAIR33 | Conductive Polymer Chip Capacitors / T530 Series - High Capacitance/Ultra-Low ESR; Capacitance [nom]: 680uF; Working Voltage (Vdc)[max]: 2.5V; Capacitance Tolerance: +/-20%; Dielectric: Conductive Polymer; ESR: 6.0mΩ; Lead Style: Surface-Mount Chip; Lead Dimensions: 7343-40; Termination: 100% Tin (Sn); Body Dimensions: 7.3mm x 4.3mm x 4mm; Temperature Range: -55C to +125C; Container: Tape & Reel; Qty per Container: 500; Features: High Capacitance; Ultra-Low ESR |
| S29GL032M10TAIR40 | CAP 1.0UF 500V 10% X7R RAD-.475 .570X.500 CONF BULK |
| S29GL032M10TAIR43 | CAP TANT 220UF 2.5V 20% POLY SMD |
| S29GL032M10FBCR33 | MirrorBit Flash Family |
| S29GL032M10FAIR50 | MirrorBit Flash Family |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL032M10TAIR32 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
| S29GL032M10TAIR33 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
| S29GL032M10TAIR40 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
| S29GL032M10TAIR42 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 32MBIT 4MX8/2MX16 100NS 48TSOP - Tape and Reel |
| S29GL032M10TAIR43 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。