參數(shù)資料
型號(hào): S29GL032M10FBCR50
廠商: Spansion Inc.
英文描述: MirrorBit Flash Family
中文描述: MirrorBit閃存系列
文件頁數(shù): 140/159頁
文件大小: 2217K
代理商: S29GL032M10FBCR50
140
S29GLxxxM MirrorBit
TM
Flash Family
S29GLxxxM_00_B3 Octorber 18, 2004
D a t a s h e e t
Notes:
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. D
OUT
is the data written to the device.
4. Illustration shows device in word mode.
Figure 24. Alternate CE# Controlled Write (Erase/Program) Operation Timings
t
GHEL
t
WS
OE#
CE#
WE#
RESET#
t
DS
Data
t
AH
Addresses
t
DH
t
CP
DQ7#
D
OUT
t
WC
t
AS
t
CPH
PA
Data# Polling
PBD for program
55 for erase
t
RH
t
WHWH1 or 2
t
POLL
RY/BY#
t
WH
29 for program buffer to flash
30 for sector erase
10 for chip erase
PBA for program
2AA for erase
SA for program buffer to flash
SA for sector erase
555 for chip erase
t
BUSY
相關(guān)PDF資料
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S29GL064N11FFIV20 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11BFIV22 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11BFIV60 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11BFIV62 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
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