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參數(shù)資料
| 型號(hào)： | S29GL032M10FAIR53 |
| 廠商： | Spansion Inc. |
| 英文描述： | MirrorBit Flash Family |
| 中文描述： | MirrorBit閃存系列 |
| 文件頁(yè)數(shù)： | 7/159頁(yè) |
| 文件大?。?/td> | 5216K |
| 代理商： | S29GL032M10FAIR53 |
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104
S29GLxxxM MirrorBitTM Flash Family
S29GLxxxM_00_B3 Octorber 18, 2004
Data s he et
Autoselect Command Sequence
The autoselect command sequence allows the host system to read several identifier codes at specific addresses:
Note: The device ID is read over three cycles. SA = Sector Address
The autoselect command sequence is initiated by first writing two unlock cycles. This is followed by a third write
cycle that contains the autoselect command. The device then enters the autoselect mode. The system may read
at any address any number of times without initiating another autoselect command sequence:
The system must write the reset command to return to the read mode (or erase-suspend-read mode if the device
was previously in Erase Suspend).
Enter SecSi Sector/Exit SecSi Sector Command Sequence
The SecSi Sector region provides a secured data area containing an 8-word/16-byte random Electronic Serial
Number (ESN). The system can access the SecSi Sector region by issuing the three-cycle Enter SecSi Sector com-
mand sequence. The device continues to access the SecSi Sector region until the system issues the four-cycle
Exit SecSi Sector command sequence. The Exit SecSi Sector command sequence returns the device to normal
operation. Table 35 on page 113 and Table 36 on page 114 show the address and data requirements for both com-
mand sequences. See also “SecSi (Secured Silicon) Sector Flash Memory Region” for further information. Note that
the ACC function and unlock bypass modes are not available when the SecSi Sector is enabled.
Word Program Command Sequence
Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two unlock
write cycles, followed by the program set-up command. The program address and data are written next, which in
turn initiate the Embedded Program algorithm. The system is not required to provide further controls or timings.
The device automatically provides internally generated program pulses and verifies the programmed cell margin.
Table 35 on page 113 and Table 36 on page 114 show the address and data requirements for the word program
command sequence, respectively.
When the Embedded Program algorithm is complete, the device then returns to the read mode and addresses are
no longer latched. The system can determine the status of the program operation by using DQ7 or DQ6. Refer to
the Write Operation Status section for information on these status bits. Any commands written to the device dur-
ing the Embedded Program Algorithm are ignored. Note that the SecSi Sector, autoselect, and CFI functions are
unavailable when a program operation is in progress. Note that a hardware reset immediately terminates the
program operation. The program command sequence should be reinitiated once the device returns to the read
mode, to ensure data integrity.
Programming is allowed in any sequence of address locations and across sector boundaries. Programming to the
same word address multiple times without intervening erases (incremental bit programming) requires a modified
programming method. For such application requirements, please contact your local Spansion representative.
Word programming is supported for backward compatibility with existing Flash driver software and for occasional
writing of individual words. Use of write buffer programming (see below) is strongly recommended for general
programming use when more than a few words are to be programmed. The effective word programming time
using write buffer programming is approximately four times shorter than the single word programming time.
Identifier Code
A7:A0
(x16)
A6:A-1
(x8)
Manufacturer ID
00h
Device ID, Cycle 1
01h
02h
Device ID, Cycle 2
0Eh
1Ch
Device ID, Cycle 3
0Fh
1Eh
SecSi Sector Factory Protect
03h
06h
Sector Protect Verify
(SA)02h
(SA)04h
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| S29GL032M10FAIR63 | MirrorBit Flash Family |
| S29GL032M10FBCR32 | MirrorBit Flash Family |
| S29GL032M10FFIR50 | CAP 330UF 10V 20% COND-POLYMER SMD-7343-43 LOWESR-280 T&R |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| S29GL032M10FAIR60 | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:MirrorBit Flash Family |
| S29GL032M10FAIR62 | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:MirrorBit Flash Family |
| S29GL032M10FAIR63 | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:MirrorBit Flash Family |
| S29GL032M10FBCR00 | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
| S29GL032M10FBCR02 | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:MirrorBit Flash Family |
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