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參數(shù)資料
| 型號(hào)： | S29GL032M10BAIR40 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | MirrorBit Flash Family |
| 中文描述： | 2M X 16 FLASH 3V PROM, 100 ns, PBGA48 |
| 封裝： | 8 X 9 MM, FBGA-48 |
| 文件頁(yè)數(shù)： | 78/116頁(yè) |
| 文件大小： | 6024K |
| 代理商： | S29GL032M10BAIR40 |
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62
S29GL-M MirrorBitTM Flash Family
S29GL-M_00_B8 February 7, 2007
Data
Sheet
Any bit in a word cannot be programmed from “0” back to a “1.” Attempting to do so may
cause the device to set DQ5=1, or cause DQ7 and DQ6 status bits to indicate the operation was
successful. However, a succeeding read shows that the data is still “0.” Only erase operations can
convert a “0” to a “1.”
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to program words to the device faster than using
the standard program command sequence. The unlock bypass command sequence is initiated by
first writing two unlock cycles. This is followed by a third write cycle containing the unlock bypass
command, 20h. The device then enters the unlock bypass mode. A two-cycle unlock bypass mode
command sequence is all that is required to program in this mode. The first cycle in this sequence
contains the unlock bypass program command, A0h; the second cycle contains the program ad-
dress and data. Additional data is programmed in the same manner. This mode dispenses with
the initial two unlock cycles required in the standard program command sequence, resulting in
sequence.
During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset com-
mands are valid. To exit the unlock bypass mode, the system must issue the two-cycle unlock
bypass reset command sequence. The first cycle must contain the data 90h. The second cycle
must contain the data 00h. The device then returns to the read mode.
Write Buffer Programming
Write Buffer Programming allows the system write to a maximum of 16 words/32 bytes in one
programming operation. This results in faster effective programming time than the standard pro-
gramming algorithms. The Write Buffer Programming command sequence is initiated by first
writing two unlock cycles. This is followed by a third write cycle containing the Write Buffer Load
command written at the Sector Address in which programming occurs. The fourth cycle writes the
sector address and the number of word locations, minus one, to be programmed. For example, if
the system programs six unique address locations, then 05h should be written to the device. This
tells the device how many write buffer addresses are loaded with data and therefore when to ex-
pect the Program Buffer to Flash command. The number of locations to program cannot exceed
the size of the write buffer or the operation aborts.
The fifth cycle writes the first address location and data to be programmed. The write-buffer-page
is selected by address bits AMAX–A4. All subsequent address/data pairs must fall within the se-
lected-write-buffer-page. The system then writes the remaining address/data pairs into the write
buffer. Write buffer locations may be loaded in any order.
The write-buffer-page address must be the same for all address/data pairs loaded into the write
buffer. (This means Write Buffer Programming cannot be performed across multiple write-buffer
pages.) This also means that Write Buffer Programming cannot be performed across multiple sec-
tors. If the system attempts to load programming data outside of the selected write-buffer page,
the operation aborts.
Note that if a Write Buffer address location is loaded multiple times, the address/data pair counter
is decremented for every data load operation. The host system must therefore account for loading
a write-buffer location more than once. The counter decrements for each data load operation, not
for each unique write-buffer-address location. Note also that if an address location is loaded more
than once into the buffer, the final data loaded for that address is programmed.
Once the specified number of write buffer locations are loaded, the system must then write the
Program Buffer to Flash command at the sector address. Any other address and data combination
aborts the Write Buffer Programming operation. The device then begins programming. Data poll-
ing should be used while monitoring the last address location loaded into the write buffer. DQ7,
DQ6, DQ5, and DQ1 should be monitored to determine the device status during Write Buffer
Programming.
The write-buffer programming operation can be suspended using the standard program suspend/
resume commands. Upon successful completion of the Write Buffer Programming operation, the
device is ready to execute the next command.
The Write Buffer Programming Sequence can be aborted in the following ways:
Load a value that is greater than the page buffer size during the Number of Locations to Pro-
gram step.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29GL032M10BAIR42 | Conductive Polymer Chip Capacitors / T520 Series - High Temperature; Capacitance [nom]: 33uF; Working Voltage (Vdc)[max]: 6.3V; Capacitance Tolerance: +/-20%; Dielectric: Conductive Polymer; Lead Style: Surface-Mount Chip; Lead Dimensions: 3528-21; Termination: Solder Coated (SnPb, Pb 5% min); Body Dimensions: 3.5mm x 2.8mm x 1.9mm; Temperature Range: -55C to +125C; Container: Tape & Reel; Qty per Container: 2,000; Features: Low Temperature |
| S29GL032M10BAIR43 | MirrorBit Flash Family |
| S29GL032M10BFIR42 | MirrorBit Flash Family |
| S29GL032M10BFIR32 | T528 Series - I, M, Z Case Sizes - Face Down Termination Tantalum Surface Mount Capacitor; Capacitance [nom]: 330uF; Working Voltage (Vdc)[max]: 4V; Capacitance Tolerance: +/-20%; Dielectric: Tantalum, Solid; ESR: 9.0mΩ; Lead Style: Surface-Mount Chip; Lead Dimensions: 7343-17; Termination: 100% Tin (Sn); Body Dimensions: 7.3mm x 4.3mm x 1.7mm; Temperature Range: -55C to +105C; Container: Tape & Reel; Qty per Container: 1,000; Features: Face Down Termination |
| S29GL032M10BFIR40 | MirrorBit Flash Family |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL032M10BAIR42 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 32MBIT 4MX8/2MX16 100NS 48FBGA - Tape and Reel |
| S29GL032M10BAIR43 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| S29GL032M10BAIR50 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
| S29GL032M10BAIR52 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
| S29GL032M10BAIR53 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
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