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參數(shù)資料
| 型號： | S29GL032A10TAIR11 |
| 廠商： | Spansion Inc. |
| 英文描述： | Ceramic Chip Capacitors / High Voltage; Capacitance [nom]: 3.3pF; Working Voltage (Vdc)[max]: 500V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Solder (SnPb) Plated Nickel Barrier; Body Dimensions: 0.079" x 0.049"; Container: Bulk; Features: High Voltage; Unmarked |
| 中文描述： | 64兆位32MEGABIT 3.0螺栓只頁面模式閃存 |
| 文件頁數(shù)： | 44/88頁 |
| 文件大?。?/td> | 1425K |
| 代理商： | S29GL032A10TAIR11 |
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January 28, 2005 S29GLxxxA_00_A2
S29GLxxxA MirrorBit Flash Family
47
Advance
Information
bit programming, a modified programming method is required; please contact
your local Spansion representative. Any bit in a write buffer address range
cannot be programmed from “0” back to a “1.” Attempting to do so may
cause the device to set DQ5=1, of cause the DQ7 and DQ6 status bits to indicate
the operation was successful. However, a succeeding read will show that the data
is still “0.” Only erase operations can convert a “0” to a “1.”
Accelerated Program
The device offers accelerated program operations through the WP#/ACC or ACC
pin depending on the particular product. When the system asserts VHH on the
WP#/ACC or ACC pin. The device uses the higher voltage on the WP#/ACC or ACC
pin to accelerate the operation. Note that the WP#/ACC pin must not be at VHH
for operations other than accelerated programming, or device damage may re-
sult. WP# has an internal pullup; when unconnected, WP# is at VIH.
Figure 3 illustrates the algorithm for the program operation. Refer to the Erase
and Program Operations–“AC Characteristics” section on page 67 section for pa-
rameters, and Figure 14 for timing diagrams.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29GL032A10TAIR21 | 64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY |
| S29GL032A11BFIR31 | 64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY |
| S29GL032A11BFIR41 | 64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY |
| S29GL032A90TAIR21 | 64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY |
| S29GL032A90TAIR31 | 64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL032A10TAIR12 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY |
| S29GL032A10TAIR13 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY |
| S29GL032A10TAIR20 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL032A10TAIR21 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY |
| S29GL032A10TAIR22 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY |
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