參數(shù)資料
型號: S29CD016G0JDEI007
廠商: SPANSION LLC
元件分類: PROM
英文描述: 512K X 32 FLASH 2.7V PROM, 67 ns, UUC76
封裝: 7.44 X 4.46 MM, DIE-76
文件頁數(shù): 9/15頁
文件大?。?/td> 437K
代理商: S29CD016G0JDEI007
October 21, 2005 S29CD016G_KGD_A1
S29CD016G Known Good Die
3
Su ppl em ent
General Description
The S29CD016G in Known Good Die (KGD) form is an 16 Mbit, 2.5 volt-only Flash
memory. Spansion defines KGD as standard product in die form, tested for func-
tionality and speed. Spansion KGD products have the same reliability and quality
as Spansion products in packaged form.
S29CD016G Features
The S29CD016G is a 16 Megabit, 2.5 Volt-only single power supply burst mode
flash memory device. The device is configured for 524,288 double words. The de-
vice can also be programmed in standard EPROM programmers.
To eliminate bus contention, each device has separate chip enable (CE#), write
enable (WE#) and output enable (OE#) controls. Additional control inputs are re-
quired for synchronous burst operations: Load Burst Address Valid (ADV#), and
Clock (CLK).
Each device requires only a single 2.5 or 2.6 Volt power supply (2.5 V to 2.75
V) for both read and write functions. A 12.0-volt VPP is not required for program
or erase operations, although an acceleration pin is available if faster program-
ming performance is required.
The device is entirely command set compatible with the JEDEC single-power-
supply Flash standard.
The Unlock Bypass mode facilitates faster programming times by requiring only
two write cycles to program data instead of four.
The Simultaneous Read/Write architecture provides simultaneous operation
by dividing the memory space into two banks. The device can begin programming
or erasing in the small bank, and then simultaneously read from the large bank,
with zero latency.
The device provides a 256-byte SecSi (Secured Silicon) Sector with an one-
time-programmable (OTP) mechanism.
In addition, the device features several levels of sector protection, which can dis-
able both the program and erase operations in certain sectors or sector groups:
Persistent Sector Protection is a command sector protection method that re-
places the old 12 V controlled protection method; Password Sector Protection
is a highly sophisticated protection method that requires a password before
changes to certain sectors or sector groups are permitted; WP# Hardware Pro-
tection prevents program or erase in the two outermost 8 Kbytes sectors of the
larger bank.
The device defaults to the Persistent Sector Protection mode. The customer must
then choose if the Standard or Password Protection method is most desirable. The
WP# Hardware Protection feature is always available, independent of the other
protection method chosen.
The Versatile I/O (VCCQ) feature allows the output voltage generated on the
device to be determined based on the VIO level. This feature allows this device to
operate in the 1.8 V I/O environment, driving and receiving signals to and from
other 1.8 V devices on the same bus. In addition, inputs and I/Os that are driven
externally are capable of handling 3.6 V.
The host system can detect whether a program or erase operation is complete by
observing the RY/BY# pin, by reading the DQ7 (Data# Polling), or DQ6 (toggle)
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