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參數(shù)資料
| 型號： | S29CD016G0JDEI007 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 512K X 32 FLASH 2.7V PROM, 67 ns, UUC76 |
| 封裝： | 7.44 X 4.46 MM, DIE-76 |
| 文件頁數(shù)： | 10/15頁 |
| 文件大小： | 437K |
| 代理商： | S29CD016G0JDEI007 |
4
S29CD016G Known Good Die
S29CD016G_KGDA1 October 21, 2005
Supplement
status bits. After a program or erase cycle has been completed, the device is
ready to read array data or accept another command.
The sector erase architecture allows memory sectors to be erased and repro-
grammed without affecting the data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection measures include a low VCC detector that automat-
ically inhibits write operations during power transitions. The password and
software sector protection feature disables both program and erase opera-
tions in any combination of sectors of memory. This can be achieved in-system
at VCC level.
The Program/Erase Suspend/Erase Resume feature enables the user to put
erase on hold for any period of time to read data from, or program data to, any
sector that is not selected for erasure. True background erase can thus be
achieved.
The hardware RESET# pin terminates any operation in progress and resets the
internal state machine to reading array data.
The device offers two power-saving features. When addresses have been stable
for a specified amount of time, the device enters the automatic sleep mode.
The system can also place the device into the standby mode. Power consump-
tion is greatly reduced in both these modes.
AMD’s Flash technology combines years of Flash memory manufacturing experi-
ence to produce the highest levels of quality, reliability and cost effectiveness.
The device electrically erases all bits within a sector simultaneously via
Fowler-Nordheim tunneling. The data is programmed using hot electron injection.
Electrical Specifications
Refer to the S29CD016G data sheet, publication number 24960, for full electrical
specifications on the S29CD016G in KGD form.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29CD016G0JFAA000 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
| S29CD016G0JFAA002 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
| S29CD016G0JFAA010 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
| S29CD016G0JFAA012 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
| S29CD016G0JFAA100 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
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