參數(shù)資料
型號: S29AL004D70TFI023
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述: 256K X 16 FLASH 3V PROM, 70 ns, PDSO48
封裝: MO-142DD, LEAD FREE, TSOP-48
文件頁數(shù): 50/55頁
文件大小: 1481K
代理商: S29AL004D70TFI023
48
S29AL004D
S29AL004D_00_A1 February 18, 2005
A d v a n c e I n f o r m a t i o n
AC Characteristics
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, V
CC
= 3.0 V, 100,000 cycles, checkerboard
data pattern.
Table 15. Erase And Programming Performance
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.7
10
s
Excludes 00h programming
prior to erasure
Chip Erase Time
11
s
Byte Programming Time
5
150
μs
Excludes system level
overhead (Note 5)
Word Programming Time
7
210
μs
Chip Programming Time
(Note 3)
Byte Mode
4.2
12.5
s
Word Mode
2.9
8.5
s
t
GHEL
t
WS
OE#
CE#
WE#
RESET#
t
DS
Data
t
AH
Addresses
t
DH
t
CP
DQ7#
D
OUT
t
WC
t
AS
t
CPH
PA
Data# Polling
A0 for program
55 for erase
t
RH
t
WHWH1 or 2
RY/BY#
t
WH
PD for program
30 for sector erase
10 for chip erase
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
t
BUSY
Notes:
1. PA = program address, PD = program data, DQ7# = complement of the data written to the device, D
OUT
= data
written to the device.
2. Figure indicates the last two bus cycles of command sequence.
3. Word mode address used as an example.
Figure 24. Alternate CE# Controlled Write Operation Timings
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