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參數(shù)資料
| 型號： | S29AL004D70TFI023 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 256K X 16 FLASH 3V PROM, 70 ns, PDSO48 |
| 封裝： | MO-142DD, LEAD FREE, TSOP-48 |
| 文件頁數(shù)： | 21/55頁 |
| 文件大?。?/td> | 1481K |
| 代理商： | S29AL004D70TFI023 |
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February 18, 2005 S29AL004D_00_A1
S29AL004D
19
A d v a n c e I n f o r m a t i o n
The system
must
issue the reset command to re-enable the device for reading
array data if DQ5 goes high, or while in the autoselect mode. See the
Reset Com-
mand on page 19
section, next.
See also
Requirements for Reading Array Data on page 11
for more information.
The table provides the read parameters, and
Figure 13, on page 37
shows the
timing diagram.
Reset Command
Writing the reset command to the device resets the device to reading array data.
Address bits are don’t care for this command.
The reset command may be written between the sequence cycles in an erase
command sequence before erasing begins. This resets the device to reading array
data. Once erasure begins, however, the device ignores reset commands until the
operation is complete.
The reset command may be written between the sequence cycles in a program
command sequence before programming begins. This resets the device to read-
ing array data (also applies to programming in Erase Suspend mode). Once
programming begins, however, the device ignores reset commands until the op-
eration is complete.
The reset command may be written between the sequence cycles in an autoselect
command sequence. Once in the autoselect mode, the reset command
must
be
written to return to reading array data (also applies to autoselect during Erase
Suspend).
If DQ5 goes high during a program or erase operation, writing the reset command
returns the device to reading array data (also applies during Erase Suspend).
Autoselect Command Sequence
The autoselect command sequence allows the host system to access the manu-
facturer and devices codes, and determine whether or not a sector is protected.
Table on page 24
shows the address and data requirements. This method is an
alternative to that shown in
Table on page 15
, which is intended for PROM pro-
grammers and requires V
ID
on address bit A9.
The autoselect command sequence is initiated by writing two unlock cycles, fol-
lowed by the autoselect command. The device then enters the autoselect mode,
and the system may read at any address any number of times, without initiating
another command sequence.
A read cycle at address XX00h retrieves the manufacturer code. A read cycle at
address XX01h in word mode (or 02h in byte mode) returns the device code. A
read cycle containing a sector address (SA) and the address 02h in word mode
(or 04h in byte mode) returns 01h if that sector is protected, or 00h if it is un-
protected. Refer to
Table 2 on page 13
and
Table on page 14
for valid sector
addresses.
The system must write the reset command to exit the autoselect mode and return
to reading array data.
Word/Byte Program Command Sequence
The system may program the device by word or byte, depending on the state of
the BYTE# pin. Programming is a four-bus-cycle operation. The program com-
mand sequence is initiated by writing two unlock write cycles, followed by the
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| S29AL004D90BAI010 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL004D90BAI012 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL004D90BAI013 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL004D90BAI020 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL004D90BAI022 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
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