
8
ELECTRICAL CHARACTERISTICS
S1C33205 PRODUCT PART
EPSON
A-69
A-1
A-8
8.3 DC Characteristics
1) 3.3 V/5.0 V dual power source
(Unless otherwise specified: VDDE=5V±0.5V, VDD=2.7V to 3.6V, VSS=0V, Ta=-40°C to +85°C)
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Input leakage current
ILI
-1
–
1
A
Off-state leakage current
IOZ
-1
–
1
A
High-level output voltage
VOH
IOH=-3mA (Type1), IOH=-12mA (Type3),
VDDE=Min.
VDDE
-0.4
––
V
Low-level output voltage
VOL
IOL=3mA (Type1), IOL=12mA (Type3),
VDDE=Min.
––
0.4
V
High-level input voltage
VIH
CMOS level, VDDE=Max.
3.5
–
V
Low-level input voltage
VIL
CMOS level, VDDE=Min.
––
1.0
V
Positive trigger input voltage
VT+
CMOS schmitt
2.0
–
4.0
V
Negative trigger input voltage
VT-
CMOS schmitt
0.8
–
3.1
V
Hysteresis voltage
VH
CMOS schmitt
0.3
–
V
High-level input voltage
VIH2
TTL level, VDDE=Max.
2.0
–
V
Low-level input voltage
VIL2
TTL level, VDDE=Min.
––
0.8
V
Pull-up resistor
RPU
VI=0V
60
120
288
k
Pull-down resistor
RPD
VI=VDDE (ICEMD)
30
60
144
k
Input pin capacitance
CI
f=1MHz, VDDE=0V
––
10
pF
Output pin capacitance
CO
f=1MHz, VDDE=0V
––
10
pF
I/O pin capacitance
CIO
f=1MHz, VDDE=0V
––
10
pF
2) 3.3 V single power source
(Unless otherwise specified: VDDE=VDD=3.0V to 3.6V, Ta=-40°C to +85°C)
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Input leakage current
ILI
-1
–
1
A
Off-state leakage current
IOZ
-1
–
1
A
High-level output voltage
VOH
IOH=-2mA (Type1), IOH=-6mA (Type2),
IOH=-12mA (Type3), VDD=Min.
VDD
-0.4
––
V
Low-level output voltage
VOL
IOL=2mA (Type1), IOL=6mA (Type2),
IOL=12mA (Type3), VDD=Min.
––
0.4
V
High-level input voltage
VIH
LVTTL level, VDD=Max.
2.0
–
V
Low-level input voltage
VIL
LVTTL level, VDD=Min.
––
0.8
V
Positive trigger input voltage
VT+
LVTTL schmitt
1.1
–
2.4
V
Negative trigger input voltage
VT-
LVTTL schmitt
0.6
–
1.8
V
Hysteresis voltage
VH
LVTTL schmitt
0.1
–
V
Pull-up resistor
RPU
VI=0V
Other than DSIO
80
200
480
k
DSIO
40
100
240
k
Pull-down resistor
RPD
VI=VDD (ICEMD)
40
100
240
k
Input pin capacitance
CI
f=1MHz, VDD=0V
––
10
pF
Output pin capacitance
CO
f=1MHz, VDD=0V
––
10
pF
I/O pin capacitance
CIO
f=1MHz, VDD=0V
––
10
pF
Note: See Appendix B for pin characteristics.