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參數(shù)資料
| 型號(hào)： | S1206xH |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | The S12xxxH series of SCRs uses a high performance MESA |
| 中文描述： | 在可控硅S12xxxH系列采用高性能的梅薩 |
| 文件頁(yè)數(shù)： | 4/5頁(yè) |
| 文件大小： | 61K |
| 代理商： | S1206XH |
1
10
10
100
1000
I
(A). I
2
t (A
2
s)
TSM
Tj initial = 25 C
ITSM
tp(ms)
I
2
t
Fig.7 :
Nonrepetitive surge peak on-state current
for a sinusoidal pulse with width : tp
≤
10ms, and
correspondingvalue of I
2
t.
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
1
10
100
200
I
(A)
TM
Tj initial
25 C
Tj max
V
(V)
TM
Tj max
Vto =0.85V
Rt =0.030
Fig.8 :
On-statecharacteristics(maximum values).
S12xxxH
4/5
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