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參數(shù)資料
| 型號(hào)： | S1206xH |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | The S12xxxH series of SCRs uses a high performance MESA |
| 中文描述： | 在可控硅S12xxxH系列采用高性能的梅薩 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 61K |
| 代理商： | S1206XH |
P
G (AV)
= 1W P
GM
=10 W (tp = 20
μ
s)
I
GM
= 4A (tp = 20
μ
s)
GATE CHARACTERISTICS
(maximumvalues)
Symbol
Parameter
Value
Unit
Rth(j-a)
Junctionto ambient
60
°
C/W
Rth(j-c)
Junctionto case for DC
3
°
C/W
THERMAL RESISTANCES
Symbol
TestConditions
Sensitivity
Unit
06
10
17
I
GT
V
D
=12V (DC) R
L
=33
Tj= 25
°
C
MIN
0.5
10
4
mA
MAX
5
25
15
V
GT
V
D
=12V (DC) R
L
=33
Tj= 25
°
C
MAX
1.5
V
V
GD
V
D
=V
DRM
R
L
=3.3k
Tj= 125
°
C
MIN
0.2
V
tgt
V
D
=V
DRM
dI
G
/dt = 0.5A/
μ
s
I
TM
= 3 x I
T(AV
)
I
G
= 40mA
Tj= 25
°
C
TYP
2
μ
s
I
H
I
T
= 250mA Gate open
Tj= 25
°
C
MAX
15
50
30
mA
I
L
I
G
=1.2 I
GT
Tj= 25
°
C
MAX
30
100
60
mA
V
TM
I
TM
= 24A tp= 380
μ
s
Tj= 25
°
C
MAX
1.6
V
I
DRM
I
RRM
V
D
=V
DRM
V
R
=V
RRM
Tj= 25
°
C
MAX
5
μ
A
Tj= 110
°
C
MAX
1.5
mA
dV/dt
V
D
=67%V
DRM
Gate open
Tj= 110
°
C
MIN
200
100
V/
μ
s
Tj= 110
°
C
TYP
10
tq
I
TM
= 3 x I
T(AV
) V
R
=35V
dI/dt=10A/
μ
s
dV/dt=5V/
μ
s
V
D
= 67%V
DRM
tp=100
μ
s
Tj= 110
°
C
MAX
100
μ
s
ELECTRICALCHARACTERISTICS
ORDERING INFORMATION
S
12
17
M
H
SCR MESAGLASS
CURRENT
PACKAGE:
H =TO220 Non-insulated
VOLTAGE
SENSITIVITY
S12xxxH
2/5
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